NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier Applicatons Up to 960 MHz. FEATURES INCLUDE: • Input Matching Network • Min Gain 4.3 dB • Gold Metalization

NPN SILICON RF POWER TRANSISTOR

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Trans GP BJT NPN 16.5V 12A 6-Pin Case 319-07

846 Series High Temp Card Edge Connector | Green | 0.125 (3.175mm) Pitch | 0.250 (6.35mm) Row Spacing

Features .125 (3.175mm) Contact Spacing x .250 (6.35mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board High Profile Insulator Body, .600 (15.24mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configurations

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.

Small Surface Mount Transistor

Features - Low collector capacitance. - Low collector-emitter saturation voltage. - Reduces number of components and board space. - AEC-Q101 Qualified. - No mutual interference between the transistors.

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.