MRF6VP2600H价格

参考价格:¥1226.0595

型号:MRF6VP2600HR5 品牌:Freescale 备注:这里有MRF6VP2600H多少钱,2025年最近7天走势,今日出价,今日竞价,MRF6VP2600H批发/采购报价,MRF6VP2600H行情走势销售排行榜,MRF6VP2600H报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MRF6VP2600H

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP2600H

2-500 MHz,600 W,50 V宽带射频功率LDMOS

ETC

知名厂家

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-1230 包装:托盘 描述:FET RF 2CH 110V 225MHZ NI-1230 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

文件:1.4439 Mbytes Page:19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-1230 包装:托盘 描述:FET RF 2CH 110V 225MHZ NI1230 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

文件:1.4439 Mbytes Page:19 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP2600H产品属性

  • 类型

    描述

  • 型号

    MRF6VP2600H

  • 制造商

    FREESCALE

  • 制造商全称

    Freescale Semiconductor, Inc

  • 功能描述

    RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

更新时间:2025-11-21 10:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSL
23+
原厂原包装
6000
全新原装假一赔十
FREESCALE
18+
NI1230
12500
全新原装正品,本司专业配单,大单小单都配
恩XP
22+
NI1230
9000
原厂渠道,现货配单
FREESCALE/飞思卡尔
24+
BGA
29048
只做原装进口现货
FREESCALE
2019+
SMD
6992
原厂渠道 可含税出货
恩XP
24+
NI-1230
8540
只做原装正品现货或订货假一赔十!
Freescale(飞思卡尔)
24+
标准封装
12663
我们只是原厂的搬运工
FREESCALE
24+
30000
一级代理现货、保证进口原装正品假一罚十价格合理
FREESCALE
23+
BGA
2503
原厂原装正品
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择

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