位置：首页 > IC中文资料第660页 > MRF6S19100NB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF6S19100NB | 1990MHZ 22W TO272WB4N | ETC 知名厂家 | ETC |   |
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：TO-272BB 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ TO272-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S19100NB产品属性
- 类型
描述
- 型号
MRF6S19100NB
- 功能描述
射频MOSFET电源晶体管 1990MHZ 22W
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FREESCALE |
05+26 |
45 |
公司优势库存 热卖中! |
||||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
飞思卡尔 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESCALE |
2308+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
|||
恩XP |
23+ |
TO272 WB4 |
8000 |
只做原装现货 |
|||
FREESCALE |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
FREESCALE |
24+ |
晶体管 |
417 |
“芯达集团”专营军工、宇航级IC原装进口现货 |
|||
FREESCA |
23+ |
NI-780S |
8560 |
受权代理!全新原装现货特价热卖! |
|||
恩XP |
22+ |
TO272 WB4 |
9000 |
原厂渠道,现货配单 |
MRF6S19100NB芯片相关品牌
MRF6S19100NB规格书下载地址
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