位置：首页 > IC中文资料第581页 > MRF6S18100NR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 28 Volt | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：769.86 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：TO-270AB 包装：卷带（TR） 描述：FET RF 68V 1.99GHZ TO2704 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：769.86 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF6S18100NR产品属性
- 类型
描述
- 型号
MRF6S18100NR
- 功能描述
射频MOSFET电源晶体管 1990MHZ 28V
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale |
24+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
FREESCALE |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FREESCAL |
09+ |
高频管 |
1 |
原装现货海量库存欢迎咨询 |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
FREESC |
21+ |
模块/大 |
12588 |
原装现货价格优势 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FRESSCAL |
24+ |
SMD |
80 |
||||
恩XP |
22+ |
TO270 WB4 |
9000 |
原厂渠道,现货配单 |
|||
FREESCA |
23+ |
NI-880 |
8560 |
受权代理!全新原装现货特价热卖! |
MRF6S18100NR规格书下载地址
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