N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

880 MHz, 20 W AVG., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

封装/外壳：TO-270AB 包装：卷带（TR） 描述：FET RF 68V 880MHZ TO-270-4 分立半导体产品 晶体管 - FET，MOSFET - 射频

880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

封装/外壳：TO-272BB 包装：托盘 描述：FET RF 68V 880MHZ TO-272-4 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：525.1 Kbytes Page：16 Pages

RF Power Field Effect Transistors

文件：525.1 Kbytes Page：16 Pages