SEMICONDUCTOR TECHNICAL DATA

2170 MHz, 180 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 2.16GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 2.16GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

2110-2170 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

2170 MHz, 38 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET