RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product (min) @ 60mA · Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range.

NPN RF POWER TRANSISTOR

DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting

1NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System

RF POWER TRANSISTOR NPN SILICON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. FEATURES: • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：RF TRANS NPN 20V 4GHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN RF POWER TRANSISTOR

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

RF POWER TRANSISTOR NPN SILICON 30W, 400MHz