BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line ​​​​​​​NPN Silicon Push-Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency = 55

Tthe RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Broadband Push–Pull RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 125 W Typical Gain = 10 dB Efficiency =

The RF Line Controlled ?쏲??Broadband Power Transistor 125W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 V, 400 MHz characteristics — Output power = 125 W Typical gain = 10 dB Efficiency = 55 (typ.) • Built–in input impedance matching networks for broadban

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF392 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Input Matching

125 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF392 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 300 - 500 MHz Military Communications Band.FEATURES INCLUDE:\n• Gold Metalization\n• Emitter Ballasting\n• Input Matching

Trans RF BJT NPN 30V 16A 8-Pin Case 744A-01

The RF Line Controlled ?쏲??Broadband Power Transistor

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封装/外壳：744A-01 包装：托盘 描述：RF TRANS 2NPN EMITTR 30V 744A-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line Controlled Broadband Power Transistor

文件：222.65 Kbytes Page：6 Pages

The RF Line Controlled ?쏲??Broadband Power Transistor

文件：685.56 Kbytes Page：7 Pages

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

Silicon Complementary Transistors General Purpose

Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 25A Collector Current ● Low Leakage Current: ICEO = 1mA @ VCE = 60V ● Excellent DC Gain: hFE = 40

Low Power Operational Amplifier/Voltage Comparator

文件：98.88 Kbytes Page：6 Pages

Low Power Operational Amplifier/Voltage Comparator

文件：98.88 Kbytes Page：6 Pages

Low Power Operational Amplifier/Voltage Comparator

文件：98.88 Kbytes Page：6 Pages