The RF Line

NPN Silicon Broadband Push–Pull RF Power Transistor

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

• Specified 28 Volt, 400 MHz Characteristics —

Output Power = 125 W

Typical Gain = 10 dB

Efficiency = 55 (Typ)

• Built–In Input Impedance Matching Networks for Broadband Operation

• Push–Pull Configuration Reduces Even Numbered Harmonics

• Gold Metallization System for High Reliability

• 100 Tested for Load Mismatch