RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source am

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- sig

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFET

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 70V 860MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

Mini-Clamp Socket

• Designed to accommodate typical wiring specifications per Japanese and Asian suppliers • Latches available for Panel Mount applications • No special wire preparation • Integrated cable retention • Design accepts multiple wire size diameters • Easy, quick, and reliable IDC termination using

Work horse clamp with increased performance and flexibility

文件：97.97 Kbytes Page：2 Pages

SUBMINIATURE FUSES

文件：78.05 Kbytes Page：2 Pages

Celeron M Processor on 90 nm Process

文件：879.41 Kbytes Page：68 Pages

High Performance Box Sealing Tape

文件：14.73 Kbytes Page：2 Pages