RF Power Field-Effect Transistor

470-860 MHz, 180 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 32 volt tra

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common

470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET

RF Power Field-Effect Transistor

470-860 MHz, 180 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 32 volt tra

RF Power Field-Effect Transistor

470-860 MHz, 180 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 32 volt tra

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 68V 863MHZ NI-860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 68V 863MHZ NI-860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频

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Micropower, 3-Axis, 짹200 g Digital Output, MEMS

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