The RF MOSFET Line

RF Power Field-Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 32 volt transmitter equipment.

• Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,

f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 17 dB

Efficiency — 36

IMD — –35 dBc

• Typical Broadband Two–Tone Performance @ f1 = 857 MHz,

f2 = 863 MHz, 32 Volts

Output Power — 180 Watts PEP

Power Gain — 14.5 dB

Efficiency — 37

IMD — –31 dBc

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

• 100 Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters