The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A

RF POWER FIELD EFFECT TRANSISTORS

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 14 (SOLID) AWG Tinned Copper

Multi-turn Hall-Effect Position Sensor

 Multi-turn: All electrical angles available up to 3600°  Non-contact Hall Effect technology  Compact 25mm diameter size  Wide temperature range (-40~125°C)  Life cycle: 10M rotations  Dust & water resistant (IP 67) Applications  Control valve position feedback  Actuator motor po

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

Wiha TorqueControl Blades - For Easy Torque, TorqueFix & TorqueVario Handles

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Fuseholders - For 3AG, 5 x 20mm, or 2AG Fuses

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