2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications.

• Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 9.5 dB

Intermodulation Distortion — –28 dBc

• Typical Two–Tone Performance at 2000 MHz, 26 Volts

Output Power — 60 Watts (PEP)

Power Gain — 10.5 dB

Efficiency — 32

Intermodulation Distortion — –30 dBc

• S–Parameter Characterization at High Bias Levels

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 60 Watts (CW) Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters