2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular ra

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular ra

MONROE 284

APPLICATIONS  Direct charge measurement  Component testing  Materials qualification  Triboelectric studies  Static monitoring  IC handlers

OUTLINE, WR284 ARC DETEC. 90 E-BEND

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