RF Power Field-Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular ra

RF Power Field Effect Transistors

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

Trans RF MOSFET N-CH 65V 3-Pin NI-360

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular ra

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular ra

2.0 GHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistors

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

RF Power Field-Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R

Silicon Complementary Transistors Audio Amplifier Output

Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: ● Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage

HIGH PERFORMANCE CURRENT MODE CONTROLLERS

The UC3844B, UC3845B series are high performance fixed frequency current mode controllers. They are specifically designed for Off–Line and dc–to–dc converter applications offering the designer a cost–effective solution with minimal external components. These integrated circuits feature an oscillat

HIGH PERFORMANCE CURRENT MODE CONTROLLERS

The UC3844B, UC3845B series are high performance fixed frequency current mode controllers. They are specifically designed for Off−Line and dc−dc converter applications offering the designer a cost−effective solution with minimal external components. These integrated circuits feature an oscillator,

HIGH PERFORMANCE CURRENT MODE CONTROLLERS

The UC3844B, UC3845B series are high performance fixed frequency current mode controllers. They are specifically designed for Off–Line and dc–to–dc converter applications offering the designer a cost–effective solution with minimal external components. These integrated circuits feature an oscillat