RF Power Field-Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

RF Power Field Effect Transistors

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and cla

Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R

2.0 GHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

MONROE 284

APPLICATIONS  Direct charge measurement  Component testing  Materials qualification  Triboelectric studies  Static monitoring  IC handlers

OUTLINE, WR284 ARC DETEC. 90 E-BEND

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High CMV, High Performance Isolation Amplifiers

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High Precision, Low Offset, mV Input Isolation Amplifier

文件：9.02555 Mbytes Page：16 Pages

Waveguide to Coaxial Adapter

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