RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

RF Power Field Effect Transistors

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RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

封装/外壳：NI-200S 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-200S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

封装/外壳：NI-200Z 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-200Z 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

1036- 횞 1010-pixel ccd image sensor

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Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages

Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes Page：10 Pages