RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

封装/外壳：NI-200S 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-200S 分立半导体产品 晶体管 - FET，MOSFET - 射频

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

RF Power Field Effect Transistors

文件：282.21 Kbytes Page：8 Pages

封装/外壳：NI-200Z 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-200Z 分立半导体产品 晶体管 - FET，MOSFET - 射频

2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Wiha Quality Tools Toll Free: (800) 494-6104

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