The RF Sub–Micron MOSFET Line

RF POWER FIELD EFFECT TRANSISTORS

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.

• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts

Output Power — 4 Watts PEP

Power Gain — 11 dB

Efficiency — 30

Intermodulation Distortion — –29 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.