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型号 功能描述 生产厂家 企业 LOGO 操作
MR858

3.0 AMPS. Fast Recovery Rectifiers

Voltage Range 50 to 800 Volts Current 3.0 Amperes Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability

TSC

台湾半导体

MR858

FAST RECOVER Y RECTIFIER DIODES

VOLTAGE RANGE: 50 - 800V CURRENT: 3.0 A Features ● High current capability ● High surge current capability ● High reliability ● Low reverse current ● Low forward voltage drop ● Fast switching for high efficiency

SUNMATE

森美特

MR858

3A FAST RECOVERY PLASTIC RECTIFIER

FEATURES ● HIGH SURGE CURRENT CAPABILITY ● PLASTIC MATERIAL CARRIES U/L RECOGNITION 94-0 ● HIGH CURRENT OPERATION 3 AMPERES AT TA=55°C ● FAST SWITCHING FOR HIGH EFFICIENCY ● HIGH TEMPERATURE SOLDERING GUARANTEED: 250°C /10S /0.375” (9.5mm) LEAD LENGTH/5 LBS., (2.3 KG) TENSION

FRONTIER

MR858

3.0 AMPS. FAST RECOVERY RECTIFIERS

VOLTAGE RANGE 50 to 800 Volts CURRENT 3.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability

JGD

固锝电子

MR858

FAST RECOVERY RECTIFIER

Reverse Voltage: 50 to 800 Volts Forward Current:3.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Diffused junction • High current capability • High temperature soldering guaranteed:260°C/10 seconds at terminals • Component in accordance

JINANJINGHENG

晶恒集团

MR858

3.0A Fast Recovery Rectifier

3.0A Fast Recovery Rectifier Features • Fast switching for high efficiency • High surge current capability • High temperature soldering guaranteed 250°C/10 seconds /.0375 (9.5mm) lead length, 5lbs (2.3kg) tension • RoHS Compliance

TAITRON

MR858

FAST RECOVERY RECTIFIER DIODES

PRV : 50 - 600 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency

EIC

MR858

Fast Recovery Rectifiers Reverse Voltage 50 to 800 Volts Forward Current 3.0 Amperes

Reverse Voltage 50 to 800 Volts Forward Current 3.0 Amperes Features ♦ Low forward voltage drop ♦ High current capability ♦ High reliability ♦ High surge current capability ♦ TJ is 150°C (Max.) and TSTG is 175°C (Max.) with PI glue

GOOD-ARK

固锝电子

MR858

Fast / Super Fast Recovery Rectifiers

EIC

MR858

Rectifiers: Fast Recovery

SYNSEMI

MR858

Fast Recovery Rectifier 

SUNMATE

森美特

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

MR858产品属性

  • 类型

    描述

  • Package:

    DO-201AD

  • Status:

    Sampling

  • VRRM(V):

    800

  • Io(AV)(A):

    3

  • IFSM(A):

    150

  • VF(V):

    1.3

  • IR(uA):

    5

  • trr(nS):

    150

  • TJ (Max)(ºC):

    135

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