Fast Silicon Rectifiers

Features High forward surge current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Application Rectification of medium frequencies, Snubber or Bootstrap diodes Commercial grade 1) Mechanical Data 1) Taped in ammo pack 500 Weight approx. 1.7 g

Fast silicon rectifier diodes

Forward Current: 5 A Reverse Voltage: 50 to 1000 V Features • Max. solder temperature: 260°C • Plastic material has UL classification 94V-0

CURRENT 5.0 Amperes VOLTAGE 50 to 800 Volts

Features • Plastic package has Underwrites Laboratory Flammability Classification 94V-0 • Fast switching speed • Diffused junction • High current capability • High temperature soldering guaranteed : 250℃/10 seconds, 0.375(9.5mm) lead length, 5 lbs.(2.3kg) tension.

5A FAST RECOVERY PLASTIC RECTIFIER

FEATURES ● THE PLASTIC PACKAGE CARRIES UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ● HIGH SURGE CURRENT CAPABILITY ● HIGH CURRENT OPERATION ● FAST SWITCHING FOR HIGH EFFICIENCY ● DIFFUSED JUNCTION ● COMPLETELY INSULATED CASE ● UNIFORM MOLDED BODY ● HIGH TEMPERATURE SOLDERING

Axial lead diode

Forward Current: 5 A Reverse Voltage: 50 to 1000 V Features • Max,solder temperature: 260°C • Plastic material has UL classification 94V-0

Fast Silicon Rectifiers

FEATURES • Plastic package has Underwrites Laboratory Flammability Classification 94V-0 • Fast switching speed • Diffused junction • High current capability • High temperature soldering guaranteed : 250℃/10 seconds, 0.375(9.5mm) lead length, 5 lbs.(2.3kg) tension.

Fast Recovery Rectifiers

35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES

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Fast silicon rectifier diodes

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Fast Silicon-Rectifiers

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Fast Recovery Rectifier Diodes

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N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

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