封装/外壳：按钮，轴向 包装：卷带（TR） 描述：DIODE GP 600V 6A LEADED BUTTON 分立半导体产品 二极管 - 整流器 - 单

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an

High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ?쏶uperBAT?

FEATURES: • Low VF • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA