High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

High-speed switching diodes

High-speed switching diodes

丝印代码：A7；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very

High-speed switching diodes

High-speed switching diodes

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. • High switching speed: trr ≤ 4 ns\n• Low capacitance: Cd ≤ 2 pF\n• Low leakage current\n• Reverse voltage: VR ≤ 90 V\n• Small SMD plastic packages\n• AEC-Q101 qualified;

High-speed switching diode

High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

丝印代码：A7；High-speed switching diode

1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 90V 250MA 6TSSOP 分立半导体产品 二极管 - 整流器 - 阵列

High-speed switching diodes

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High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ?쏶uperBAT?

FEATURES: • Low VF • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA