| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MR756 | 6 Amp Rectifier 50 - 1000 Volts Features • Low Cost • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability • Low Leakage | MCC | ||
MR756 | HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S | MOTOROLA 摩托罗拉 | ||
MR756 | 6Amp rectifier 50-1000 volts Features ● Low Cost ● Low Forward Voltage Drop ● High Current Capability ● High Surge Current Capability ● Low Leakage | CHENYI 商朗电子 | ||
MR756 | 25 AMP LEAD MOUNT BUTTON DIODES FEATURES ● SUGGESTED REPLACEMENT FOR MR751, MR752, MR754, MR756 DIODES ● VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical | DEC | ||
MR756 | 6.0A STANDARD DIODE Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability | WTE Won-Top Electronics | ||
MR756 | 6.0A STANDARD DIODE Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability | WTE Won-Top Electronics | ||
MR756 | 6A 600V Silicon Rectifier • Current Capacity Comparable to Chassis Mounted Rectifiers\n• Very High Surge Capacity\n• Insulated CaseMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 2.5 grams (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable\n• Lead Temper; | ONSEMI 安森美半导体 | ||
MR756 | 6A 600V Rectifying tube 文件:295.471 Kbytes Page:2 Pages | |||
MR756 | 6.0A Axial Leaded Silicon Rectifier 文件:217.86 Kbytes Page:2 Pages | SUNMATE 森美特 | ||
MR756 | AUTOMOTIVE RECTIFIER DIODES 文件:108.37 Kbytes Page:2 Pages | EIC | ||
MR756 | 6 Amp Rectifier 50 - 1000 Volts 文件:126.63 Kbytes Page:5 Pages | MCC | ||
MR756 | High Current Lead Mounted Rectifiers 文件:96.87 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
MR756 | 封装/外壳:按钮,轴向 包装:散装 描述:DIODE GP 600V 6A MICRODE BUTTON 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MR756 | 封装/外壳:按钮,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GP 600V 6A MICRODE BUTTON 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MR756 | High Current Lead Mounted Rectifiers 文件:89.78 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
6 Amp Fast Recovery Rectifier 50 to 1000 Volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency | MCC | |||
6Amp fast recovery rectifier 50to100 volts Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency | CHENYI 商朗电子 | |||
6.0A STANDARD DIODE Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability | WTE Won-Top Electronics | |||
Diode Switching 600V 22A 2-Pin Case 194-04 Box | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
High Current Lead Mounted Rectifiers 文件:96.87 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
High Current Lead Mounted Rectifiers 文件:96.87 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
High Current Lead Mounted Rectifiers 文件:96.87 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
High-speed switching diode array DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee | PHILIPS 飞利浦 | |||
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an | DIODES 美台半导体 | |||
High-speed switching diode array DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee | PHILIPS 飞利浦 | |||
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ?쏶uperBAT? FEATURES: • Low VF • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA | ZETEX |
MR756产品属性
- 类型
描述
- Peak Reverse Repetitive Voltage:
600V
- Peak Reverse Current:
25uA
- Peak Non-Repetitive Surge Current:
400A
- Peak Forward Voltage:
1.25@100AV
- Operating Junction Temperature:
-65 to 175°C
- Minimum Operating Temperature:
-65°C
- Maximum Operating Temperature:
175°C
- Maximum Continuous Forward Current:
22A
- Configuration:
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
Microde 按钮 |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
Microde 按钮 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON(安森美) |
25+ |
标准封装 |
20000 |
原装,请咨询 |
|||
ON(安森美) |
23+ |
11977 |
公司只做原装正品,假一赔十 |
||||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装,价格优势,欢迎洽谈! |
MR756规格书下载地址
MR756参数引脚图相关
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