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型号 功能描述 生产厂家 企业 LOGO 操作
MR756

6 Amp Rectifier 50 - 1000 Volts

Features • Low Cost • Low Forward Voltage Drop • High Current Capability • High Surge Current Capability • Low Leakage

MCC

MR756

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

MOTOROLA

摩托罗拉

MR756

6Amp rectifier 50-1000 volts

Features ● Low Cost ● Low Forward Voltage Drop ● High Current Capability ● High Surge Current Capability ● Low Leakage

CHENYI

商朗电子

MR756

25 AMP LEAD MOUNT BUTTON DIODES

FEATURES ● SUGGESTED REPLACEMENT FOR MR751, MR752, MR754, MR756 DIODES ● VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

DEC

MR756

6.0A STANDARD DIODE

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

WTE

Won-Top Electronics

MR756

6.0A STANDARD DIODE

Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability

WTE

Won-Top Electronics

MR756

6A 600V Silicon Rectifier

• Current Capacity Comparable to Chassis Mounted Rectifiers\n• Very High Surge Capacity\n• Insulated CaseMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 2.5 grams (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable\n• Lead Temper;

ONSEMI

安森美半导体

MR756

6A 600V Rectifying tube

文件:295.471 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

MR756

6.0A Axial Leaded Silicon Rectifier

文件:217.86 Kbytes Page:2 Pages

SUNMATE

森美特

MR756

AUTOMOTIVE RECTIFIER DIODES

文件:108.37 Kbytes Page:2 Pages

EIC

MR756

6 Amp Rectifier 50 - 1000 Volts

文件:126.63 Kbytes Page:5 Pages

MCC

MR756

High Current Lead Mounted Rectifiers

文件:96.87 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MR756

封装/外壳:按钮,轴向 包装:散装 描述:DIODE GP 600V 6A MICRODE BUTTON 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MR756

封装/外壳:按钮,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GP 600V 6A MICRODE BUTTON 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MR756

High Current Lead Mounted Rectifiers

文件:89.78 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

6 Amp Fast Recovery Rectifier 50 to 1000 Volts

Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency

MCC

6Amp fast recovery rectifier 50to100 volts

Features • Low Cost • Low Leakage • Low Forward Voltage Drop • High Current Capability • Fast Switching Speed For High Efficiency

CHENYI

商朗电子

6.0A STANDARD DIODE

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

WTE

Won-Top Electronics

Diode Switching 600V 22A 2-Pin Case 194-04 Box

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Current Lead Mounted Rectifiers

文件:96.87 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High Current Lead Mounted Rectifiers

文件:96.87 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High Current Lead Mounted Rectifiers

文件:96.87 Kbytes Page:7 Pages

ONSEMI

安森美半导体

High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

PHILIPS

飞利浦

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

Features • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • One BAV70 Circuit and One BAW56 Circuit In One Package • Easily Connected As Full Wave Bridge • Lead Free/RoHS Compliant (Note 3) • Green Device (Notes 4 an

DIODES

美台半导体

High-speed switching diode array

DESCRIPTION The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode. FEATURES • Small plastic SMD package • High switching spee

PHILIPS

飞利浦

SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ?쏶uperBAT?

FEATURES: • Low VF • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA

ZETEX

MR756产品属性

  • 类型

    描述

  • Peak Reverse Repetitive Voltage:

    600V

  • Peak Reverse Current:

    25uA

  • Peak Non-Repetitive Surge Current:

    400A

  • Peak Forward Voltage:

    1.25@100AV

  • Operating Junction Temperature:

    -65 to 175°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Operating Temperature:

    175°C

  • Maximum Continuous Forward Current:

    22A

  • Configuration:

    Single

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
Microde 按钮
18746
样件支持,可原厂排单订货!
onsemi
25+
Microde 按钮
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON(安森美)
25+
标准封装
20000
原装,请咨询
ON(安森美)
23+
11977
公司只做原装正品,假一赔十
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ON(安森美)
26+
NA
60000
只有原装 可配单
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
24+
标准封装
8000
原厂原装,价格优势,欢迎洽谈!

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