40V、5A、H 桥直流电机驱动器，带电流采样功能和ENBL/DIR输入，AEC-Q100 认证

MPQ6612A-D 是一款用于可逆电机的 H 桥电机驱动器，它可以驱动直流电机、步进电机绕组或其他负载。其 H 桥由 4 个 N 沟道功率 MOSFET 和一个用于生成栅极驱动电压的内部电荷泵组成。\n\n MPQ6612A-D 的输出控制引脚为 DIR 和 ENBL，MPQ6612A 的输出控制引脚则为 IN1 和 IN2。除此之外，这两个器件完全相同。\n\n MPQ6612A-D 在 4V 至 40V 的输入电压 (VIN) 范围内工作，根据逻辑控制可提供高达 5A 的输出电流 (IOUT)。器件被禁用时具有极低的待机电路电流。\n\n MPQ6612A- • 4V 至 40V 宽输入工作电压 (VIN) 范围\n• 电流采样精度：10%\n• 低导通电阻：• 63mΩ 上管 MOSFET (HS-FET)\n• 逐周期电流调节和限制\n• MPQ6612A-AEC1: IN1 和 IN2\n• 在两个 LS-FET 导通时的制动模式下具有低静态电流 (IQ)\n• 过流保护 (OCP)、过压保护 (OVP) 和过温保护 (OTP) 的故障指示\n• 符合 AEC-Q100 等级 1 认证\n;

Motor Control Circuits

■ Overview The AN6612 and the AN6612S are the electronic governor circuits suitable for the rotating speed control of a low voltage and compact DC motor which is used for a small tape recorder, etc. ■ Features • Wide range of operating voltage : VCC (opr) =1.8V ~ 8V • 2 package types • Fewer

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

N-Channel, Logic Level, PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

LU6612 FASTCAT TM Single-FET for 10Base-T/100Base-TX

Description The LU6612 is a single-channel, single-chip complete transceiver designed specifically for dual-speed 10Base-T and 100Base-TX repeaters and switches. LU6612 implements: ■ The 10Base-T transceiver function of IEEE 802.3u. ■ The physical coding sublayer (PCS) of IEEE 802.3u. ■ The p

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.