GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN Diodes

封装/外壳：模具 包装：托盘 描述：GAAS PIN NON HERMETIC CHIP 分立半导体产品 二极管 - 射频

Bottom-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching

Top-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching fre

cylinder point distributors

文件：743.7 Kbytes Page：4 Pages

2Watt Pulse, Electrostatically Shielded

文件：224.91 Kbytes Page：8 Pages