GaAs PIN Diodes

GaAs PIN didoes are fabricated utilizing a gold contact mesa and are protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. GaAs PIN didoes are available as bondable chips, chip-on-board components and in a variety of packages. GaAs Low Series Resistance\r\nFast Switching Speed\r\nLow Capacitance\r\nNo Reverse Bias Required\r\nAvailable in Packages and Bondable Chips\r\nAvailable as Chip-on-Board Components;

GaAs PIN DIODES

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封装/外壳：模具 包装：托盘 描述：GAAS PIN NON HERMETIC CHIP 分立半导体产品 二极管 - 射频

Bottom-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching

Top-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching fre

SI-61008-F

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Low Profile International Series Power Transformer

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