Low Profile International Series Power Transformer

文件：27.65 Kbytes Page：1 Pages

Bottom-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching

Top-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching fre

cylinder point distributors

文件：743.7 Kbytes Page：4 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

2Watt Pulse, Electrostatically Shielded

文件：224.91 Kbytes Page：8 Pages