Features

• 100 V enhancement mode power transistor

• Bottom-side cooled configuration

• RDS(on) = 7 mΩ

• IDS(max) = 90 A

• Ultra-low FOM die

• Low inductance GaNPX® package

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• Very high switching frequency (> 10 MHz)

• Fast and controllable fall and rise times

• Reverse current capability

• Zero reverse recovery loss

• Small 7.6 x 4.6 mm2 PCB footprint

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6 + 4) compliant

Applications

• Energy Storage Systems

• AC-DC Converters (secondary side)

• Uninterruptable Power Supplies

• Industrial Motor Drives

• Fast Battery Charging

• Class D Audio amplifiers

• Traction Drive

• Robotics

• Wireless Power Transfer

Description

The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.