BRIDGE RECTIFIERS

BRIDGE RECTIFIERS

桥式整流器

MP6/IF:6A/ Vol:1000V/ VF@IF:3A=>1.1V/ Tj:-55~150℃/

SILICON BRIDGE RECTIFIERS

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Silicon Bridge Rectifiers

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Bridge Rectifier

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SILICON BRIDGE RECTIFIERS

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SINGLE-PHASE SILICON BRIDGE

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TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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GaAs PIN Diodes

GaAs PIN didoes are fabricated utilizing a gold contact mesa and are protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. GaAs PIN didoes are available as bondable chips, chip-on-board components and in a variety of packages. GaAs Low Series Resistance\r\nFast Switching Speed\r\nLow Capacitance\r\nNo Reverse Bias Required\r\nAvailable in Packages and Bondable Chips\r\nAvailable as Chip-on-Board Components;

GaAs PIN Diodes

GaAs PIN didoes are fabricated utilizing a gold contact mesa and are protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. GaAs PIN didoes are available as bondable chips, chip-on-board components and in a variety of packages. GaAs Low Series Resistance\r\nFast Switching Speed\r\nLow Capacitance\r\nNo Reverse Bias Required\r\nAvailable in Packages and Bondable Chips\r\nAvailable as Chip-on-Board Components;

GaAs PIN DIODES

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封装/外壳：模具 包装：托盘 描述：GAAS PIN NON HERMETIC CHIP 分立半导体产品 二极管 - 射频

包装：托盘 描述：GAAS PIN NON HERMETIC CHIP W LEA 分立半导体产品 二极管 - 射频

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

文件：146.09 Kbytes Page：2 Pages

GaAs PIN DIODES

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.