GaAs PIN Diodes

GaAs PIN didoes are fabricated utilizing a gold contact mesa and are protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. GaAs PIN didoes are available as bondable chips, chip-on-board components and in a variety of packages. GaAs Low Series Resistance\r\nFast Switching Speed\r\nLow Capacitance\r\nNo Reverse Bias Required\r\nAvailable in Packages and Bondable Chips\r\nAvailable as Chip-on-Board Components;

GaAs PIN DIODES

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封装/外壳：模具 包装：托盘 描述：GAAS PIN NON HERMETIC CHIP 分立半导体产品 二极管 - 射频

Low Power Mixer 3 V Receiver IF Subsystem

GENERAL DESCRIPTION The AD61009 is a 3 V low power receiver IF subsystem for operation at input frequencies as high as 500 MHz and IFs from 400 kHz to 12 MHz. It consists of a mixer, IF amplifiers, I and Q demodulators, a phase-locked quadrature oscillator, and a biasing system with external powe

cylinder point distributors

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Low Profile International Series Power Transformer

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