2.7 - 15V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Blocking

DESCRIPTION The MP5016 is a protection device designed to protect circuitry on the output from transients on the input. The MP5016 also protects the input from undesired shorts and transients coming from the output. During start-up, the inrush current is limited by limiting the slew rate at

具有过压钳位和反向阻断功能的 2.7 - 15V、0.7 - 5A 限流开关管

MP5016 是一款保护装置，用于保护输出端的电路不受输入端瞬态的影响。MP5016 也可以保护输入不受短路和输出瞬态影响。启动期间，通过在输出端限制输出电压变化斜率来限制浪涌电流。变化斜率由 DV/DT 和 MODE 引脚设置控制。输出端最大负载为电流限值。限流值大小由 ILIMIT 与 GND 之间的外部电阻控制。当 ILIMIT 浮空时，限流值为固定值 2.5A。输出过压保护（OVP）具有钳位输出电压功能。钳位电压可以通过 MODE 连接来设置。MP5016 提供了连接到外部 N 通道 MOSFET 栅极的 GATE 驱动信号，在 IC 关断、电源关闭或过温关断时，用来阻止电流从输出端流 • 宽工作输入电压范围：2.7V 至 15V\n• 可选的过压钳位阈值\n• 集成 43mΩ 功率 MOSFET\n• 反向阻断 MOSFET 驱动\n• 硬短路保护的快速响应\n• 热关机和自动重试\n• 采用QFN-10（1.5mmx2mm）封装;

2.7 - 15V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Blocking

文件：1.10627 Mbytes Page：16 Pages

2.7 - 15V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Blocking

DESCRIPTION The MP5016 is a protection device designed to protect circuitry on the output from transients on the input. The MP5016 also protects the input from undesired shorts and transients coming from the output. During start-up, the inrush current is limited by limiting the slew rate at

2.7 - 15V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Blocking

DESCRIPTION The MP5016 is a protection device designed to protect circuitry on the output from transients on the input. The MP5016 also protects the input from undesired shorts and transients coming from the output. During start-up, the inrush current is limited by limiting the slew rate at

2.7- 22V, 0.7- 5A, 具有过压钳位和反向阻断功能的限流开关

MP5016H 是一款保护装置，用于保护输出端的电路不受输入端瞬态的影响。MP5016H 也可以保护输入不受短路和输出瞬态影响。启动期间，通过在输出端限制转换速率来限制浪涌电流。转换速率由 DV/DT 和 MODE 引脚设置控制。输出端最大负载为电流限值。限流值大小由 ILIMIT 与 GND 之间的外部电阻控制。当 ILIMIT 浮空时，限流值为固定值 2.5A。输出过压保护(OVP)具有钳位输出电压功能。可以通过 MODE 连接来设置钳位电压。MP5016H 提供了连接到外部 N 路 MOSFET 栅极的 GATE 驱动信号，在IC关断、电源关闭或过温关断时，用来阻止电流从输出流向输入。M • 2.7V 至 22V 宽输入工作电压范围\n• 26V 最大绝对瞬态输入电压\n• 可选的过压钳位阈值\n• 快速输出过压保护（OVP）响应\n• 集成 43mΩ 功率 MOSFET\n• 当 ILIMIT 浮空时具有可调节的限流/固定限流值\n• 反向阻断 MOSFET 驱动\n• 可通过 DV/DT 和 MODE 引脚编程软启动时间\n• 短路保护快速响应\n• 过流打嗝保护（OCP）\n• 通过UL2367认可，符合IEC60950-1 Efile # 322138\n• 过温关断保护和自动重试功能\n• 采用 QFN-10 (1.5mmx2mm)封装;

丝印代码：EK；2.7 - 15V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Blocking

文件：1.10627 Mbytes Page：16 Pages

封装/外壳：10-PowerVFQFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR LMT SWITCH N-CH 1:1 10QFN 集成电路（IC） 配电开关，负载驱动器

2.7 - 22V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Block

文件：1.26613 Mbytes Page：17 Pages

丝印代码：FG；2.7 - 22V, 0.7 - 5A, Current Limit Switch with Over-Voltage Clamp and Reverse Block

文件：1.26613 Mbytes Page：17 Pages

封装/外壳：10-PowerVFQFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 10QFN 集成电路（IC） 配电开关，负载驱动器

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package