PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity FEATURES • High isolation voltage 5300 VAC RMS—1 minute • High BVCEO minimum 70 Volts • Current t

Optocoupler, Phototransistor Output, No Base Connection

DESCRIPTION The MOC8111/ MOC8112 is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separ

NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT

DESCRIPTION The MOC8111, MOC8112, MOC8113 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES • Options :- 10mm lead spread - add G after part

6-Pin DIP Optoisolators Transistor Output(No Base Connection)

6-Pin DIP Optoisolators Transistor Output(No Base Connection) The MOC8111, MOC8112 and MOC8113 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base–to–Pin 6 connection has been eliminated for improved n

6-Pin DIP Optoisolators Transistor Output(No Base Connection)

No Base Connection Phototransistor Optocoupler

DESCRIPTION\nThe MOC8111, MOC8112 is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package.\nThe coupling device is suitable for signal transmission between two electrically separa • Current Transfer Ratio\n   MOC8111, 20% minimum\n   MOC8112, 50% minimum\n• No Base Terminal Connection for Improved\n   Common Mode Interface Immunity\n• Field-Effect Stable by TRIOS®\n   (TRansparent IOn Shield)\n• Long Term Stability\n• Industry Standard Dual-in-Line Package\n• Underwri;

MOC8112 Non-base Lead Transistor Output 6 Pin, Single

PHOTOTRANSISTOR OPTOCOUPLERS

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6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION)

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6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

Description The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity. Features ■ High isolation voltage 7500 VAC Peak—1 second ■ High BVCEO minimum 70 Volts ■ Curren

NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT

DESCRIPTION The MOC8111, MOC8112, MOC8113 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES • Options :- 10mm lead spread - add G after part

Optocoupler, Phototransistor Output, No Base Connection

DESCRIPTION The MOC8111/ MOC8112 is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separ

Optocoupler, Phototransistor Output, No Base Connection

DESCRIPTION The MOC8111/ MOC8112 is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separ

Optocoupler, Phototransistor Output, No Base Connection

DESCRIPTION The MOC8111/ MOC8112 is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separ

6-Pin DIP Optocoupler for Power Supply Applications

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Very fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATURES

Digital camera signal processor and microcontroller

GENERAL DESCRIPTION The SAA8112HL is a powerful and versatile 10-bit digital processor for video cameras. It processes the digitized sensor data and converts it to a high quality, multi-format and YUV digital signal. In addition, the SAA8112HL performs programmable statistical measurements on t

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB

SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB