6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS

Description The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M) ■ UL recognized (File #

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

The MOC8106, MOC8107 and MOC8108 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit–to–Unit Variation • Narrow (CTR) Windows that translate to a Narrow and Predictable O

6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION)

6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS(NO BASE CONNECTION) FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual-in ine package. • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Var

6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS

Description The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M) ■ UL recognized (File #

Three Channel High Performance Laser Driver

GENERAL DESCRIPTION The SP8107 is a three channel laser diode driver specifically designed for high speed DVD-RW or DVD-RAM applications. It operates two grounded laser diodes (650nm for DVD and 780nm for CD) and features three input channels that allow setting of three different optical power le

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 31 S (typ.) • Low leakage current: IDSS = −10 µA (m