Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

6 引脚 DIP 高 BVCEO 光电晶体管输出光电耦合器

CNY17XM、CNY17FXM 和 MOC810XM 器件包含砷化镓红外发光二极管，与双列直插封装中的 NPN 光电晶体管耦合。 • 高 BVCEO： 最小 70 V（CNY17XM、CNY17FXM、MOC8106M）\n• 严格匹配的电流传输比(CTR)\n• 最大程度地减少单元间的差异\n• 选择组中的电流传输比\n• 耦合电容非常低，且没有芯片到引脚 6 的基极连接，实现最低的噪声易感性（CNY17FXM、MOC8106M）\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压;

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

The MOC8106, MOC8107 and MOC8108 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit–to–Unit Variation • Narrow (CTR) Windows that translate to a Narrow and Predictable O

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can c

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can c

SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip