DESCRIPTION

The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size.

The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz

• Supply voltage : VCC = 2.7 to 5.5 V

• High-density surface mounting : 6-pin super minimold package

• Low current consumption : ICC = 9 mA TYP. @ µPC8106TB

ICC = 5 mA TYP. @ µPC8109TB

• Minimized carrier leakage : Due to double balanced mixer

• Built-in power save function

APPLICATION

• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)