50Usec, 12-bit Military A/D Converters

DESCRIPTION MN5200 Series devices are 12-bit, successive approximation A/D converters in industry-standard, 24-pin, dual-in-line packages.

50Usec, 12-bit Military A/D Converters

DESCRIPTION MN5200 Series devices are 12-bit, successive approximation A/D converters in industry-standard, 24-pin, dual-in-line packages.

50Usec, 12-bit Military A/D Converters

DESCRIPTION MN5200 Series devices are 12-bit, successive approximation A/D converters in industry-standard, 24-pin, dual-in-line packages.

1.55 關m Edge-Emitting LED DIP Module

GENERAL DESCRIPTION The OE5202G is a 1.55 μm, edge-emitting LED DIP module with a single-mode fiber pigtail. The high coupling efficiency of the OKI EE-LED yields a single-mode fiber output of over 20 μW. The module is an optimal light source for optical LAN systems and measuring instruments.

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features