PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -60V • IC = -600mA Collector Current • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • Complementary NPN Type: MMST2222A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualif

PNP Medium Power Transistor (Switching)

Features 1) BVCEO

Plastic-Encapsulate Transistors

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Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2222A)

PNP Medium Power Transistor (Switching)

Features 1) BVCEO

PNP Medium Power Transistor (Switching)

Features 1) BVCEO

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES ● Power dissipation.(PC=200mW) ● Epitaxial planar die construction. ● Complementary NPN type MMST2222A. APPLICATIONS ● General purpose application.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Epitaxial planar die construction • Complementary PNP Type available(MMST2222A)

SOT-323 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2222A)

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -60V • IC = -600mA Collector Current • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • Complementary NPN Type: MMST2222A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualif

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power dissipation: 200mW (Tamb=25°C) • Collector current: -0.6A • Marking Code: K3F • Operating and Storage junction temperature range -55°C to + 150°C • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Co

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power dissipation: 200mW (Tamb=25°C) • Collector current: -0.6A • Marking Code: K3F • Operating and Storage junction temperature range -55°C to + 150°C • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Co

60V PNP SMALL SIGNAL TRANSISTOR

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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：137.66 Kbytes Page：4 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：85.83 Kbytes Page：4 Pages

PNP Silicon Epitaxial Planar Transistor

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PNP Medium Power Transistor

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PNP Small Signal Transistors

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PNP Small Signal Transistors

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SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP)

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晶体管

Switching transistor

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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PNP Small Signal Transistors

文件：193.25 Kbytes Page：2 Pages

PNP Small Signal Transistors

文件：234.71 Kbytes Page：2 Pages

PNP Silicon Epitaxial Planar Transistor

文件：153.97 Kbytes Page：3 Pages

PNP TRANSISTOR

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PNP Transistors

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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：137.66 Kbytes Page：4 Pages

60V PNP SMALL SIGNAL TRANSISTOR

文件：430.95 Kbytes Page：6 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：137.66 Kbytes Page：4 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：137.66 Kbytes Page：4 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：85.83 Kbytes Page：4 Pages

60V PNP SMALL SIGNAL TRANSISTOR

文件：430.95 Kbytes Page：6 Pages

60V PNP SMALL SIGNAL TRANSISTOR

文件：430.95 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PNP 60V 0.6A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

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