SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gat

Power MOSFET 3 Amps, 20 Volts P?묬hannel SO??

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low volt

Power MOSFET 3 Amps, 20 Volts P?묬hannel SO??

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low volt

Power MOSFET 3 Amps, 20 Volts P?묬hannel SO??

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low volt

P-Channel 20-V (D-S) MOSFET

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Pch -100V -20A Power MOSFET

Features 1) Low on - resistance 2) High power small mold package 3) Pb-free plating ; RoHS compliant 4) 100 Rg and UIS tested 5) Halogen free Application Switching

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

Dual-P Enhancement Mode MOSFET

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