N-Channel Enhancement Mode Field Effect Transistor

Features Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Drivers, Logic level converter Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case material UL 94V-0 S

N-Channel Enhancement Mode Field Effect Transistor

Feature • Voltage controlled small signal switch • High saturation current capability

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

N-Channel Enhancement Mode FET

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MOSFETs (Field Effect Transistors)

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode FET

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Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

ROD SEALS

DESCRIPTION The BECA 170 - 179 profiles are double acting composite rod seals composed of a filled PTFE friction ring and pre-tightened rubber O'Ring. They can be mounted in the grooves of the O'Rings. Option of connecting the seal to 1 or 2 back-up rings. APPLICATIONS Machine tools

Hard Wired 170 Series

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Custom Power Modules

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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