TMOS POWER FET 1.7 AMPERES 60 VOLTS

TMOS V™ SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices

Power MOSFET

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TMOS POWER FET 1.7 AMPERES 60 VOLTS

TMOS POWER FET 1.5 AMPERES 60 VOLT

TMOS V™ SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Power MOSFET

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Power MOSFET

文件：224.93 Kbytes Page：10 Pages

Power MOSFET

文件：224.93 Kbytes Page：10 Pages

TMOS POWER FET 1.5 AMPERES 60 VOLTS RDS(on) = 0.140 OHM

TMOS POWER FET 1.7 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

Power MOSFET

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Power MOSFET

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Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

Customer Specification

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N-Channel 30-V (D-S) MOSFET

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