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MMDT5551价格
参考价格：￥0.2935
型号：MMDT5551-7-F 品牌：Diodes 备注：这里有MMDT5551多少钱，2025年最近7天走势，今日出价，今日竞价，MMDT5551批发/采购报价，MMDT5551行情走势销售排行榜，MMDT5551报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMDT5551 | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5) | DIODES 美台半导体 |   | |
MMDT5551 | NPNNPN Plastic-Encapsulate Transistors Features Epitaxial Planar Die Construction Complementary PNP Type Available(TPMMDT5401) Ideal for Medium Power Amplification and Switching | TECHPUBLIC 台舟电子 | | |
MMDT5551 | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5) | DIODES 美台半导体 | | |
MMDT5551 | Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f | MCC | | |
MMDT5551 | Plastic-Encapsulate Transistors FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching | HOTTECH 合科泰 | | |
MMDT5551 | HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | |
MMDT5551 | DUAL TRANSISTOR DUAL TRANSISTOR (NPN+NPN) FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available(MMDT5401) ● Ideal for Medium Power Amplification and Switching | JIANGSU 长电科技 | | |
MMDT5551 | Multi-Chip TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
MMDT5551 | Epitaxial Planar Die Construction Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
MMDT5551 | SOT-363 Plastic-Encapsulate Transistors Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching | DGNJDZ 南晶电子 | | |
MMDT5551 | NPNNPN Plastic-Encapsulate Transistors FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMDT5401 • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching | JINGHENG 晶恒 | | |
MMDT5551 | Dual NPN, 160V, 0.2A, SOT363 | DIODES 美台半导体 | | |
MMDT5551 | Plastic-Encapsulate Transistors 文件：309.33 Kbytes Page：4 Pages | MCC | | |
MMDT5551 | Dual NPN Small Signal Surface Mount Transistor 文件：131.87 Kbytes Page：3 Pages | BILIN 银河微电 | | |
MMDT5551 | Plastic-Encapsulate Transistors 文件：215.94 Kbytes Page：2 Pages | MCC | | |
MMDT5551 | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：78.33 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5) | DIODES 美台半导体 | | ||
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5) | DIODES 美台半导体 | | ||
Plastic-Encapsulate Transistors FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching | GWSEMI 唯圣电子 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain | UTC 友顺 | | ||
Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f | MCC | | ||
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：78.33 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
Plastic-Encapsulate Transistors 文件：215.94 Kbytes Page：2 Pages | MCC | | ||
Dual NPN Small Signal Surface Mount Transistor 文件：131.87 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
Multi-Chip TRANSISTOR 文件：171.27 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | | ||
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：180.81 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR 文件：149.34 Kbytes Page：3 Pages | UTC 友顺 | | ||
Plastic-Encapsulate Transistors 文件：309.33 Kbytes Page：4 Pages | MCC | | ||
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：78.33 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
NPN小信号三极管 | CHINABASE 创基电子 | | ||
HIGH VOLTAGE SWITCHING TRANSISTOR 文件：149.34 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN小信号三极管 | CHINABASE 创基电子 | | ||
Cold Shrink] Rubber Splicing Kits 1. Product Description 3M] 5550 Series Cold Shrink] Rubber Splicing Kits are designed for splicing 5/8 kV shielded and non-shielded, solid dielectric, power cables. Each kit contains all the materials (except connectors) required to construct 3 single-conductor splices on tape shield, wire sh | 3M | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | | ||
500 Series Intelligent Sensors with Integral Communications 文件：123.14 Kbytes Page：4 Pages | SYSTEMSENSOR | |
MMDT5551产品属性
- 类型
描述
- 型号
MMDT5551
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
25+ |
SOT-363 |
32360 |
DIODES/美台全新特价MMDT5551-7-F即刻询购立享优惠#长期有货 |
|||
CJ/长电 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CJ/长电 |
25+ |
SOT-363 |
54648 |
百分百原装现货 实单必成 |
|||
SOT-363 |
2021 |
CJ |
96000 |
全新原装公司现货
|
|||
DIODES/美台 |
22+ |
SOT-363 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
DIODESINC |
23+ |
NA |
2375 |
专做原装正品,假一罚百! |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
长晶科技 |
21+ |
SOT-363 |
50 |
全新原装鄙视假货 |
|||
DIODES |
17PB |
SOT-363 |
20 |
普通 |
|||
CJ/长电 |
2450+ |
SOT363 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
MMDT5551规格书下载地址
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2019-11-29
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