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MMBTA42L价格
参考价格：￥0.2183
型号：MMBTA42LT1 品牌：Infineon 备注：这里有MMBTA42L多少钱，2025年最近7天走势，今日出价，今日竞价，MMBTA42L批发/采购报价，MMBTA42L行情走势销售排行榜，MMBTA42L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBTA42L | High Voltage Transistors High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 |   | |
MMBTA42L | GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The MBTA42 MBTA 43 is available in SOT 23 Pa ckage FEATURES Availabl e in SOT 23 P ackage | AITSEMI 创瑞科技 | | |
MMBTA42L | High Voltage Transistors 文件：127.24 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | |
MMBTA42L | 通用三极管 | AITSEMI 创瑞科技 | | |
MMBTA42L | 高电压 NPN 双极晶体管 | ONSEMI 安森美半导体 | | |
HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Power Dissipation: PD (max) =350mW | UTC 友顺 | | ||
HIGH VOLTAGE RANSISTOR DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW | UTC 友顺 | | ||
High Voltage Transistors High Voltage Transistors NPN Silicon | Motorola 摩托罗拉 | | ||
High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | ONSEMI 安森美半导体 | | ||
High Voltage Transistors(NPN Silicon) High Voltage Transistors NPN Silicon | LRC 乐山无线电 | | ||
NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor | TGS | | ||
NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTGE TRANDIDTOR • Complement to MMBTA92LT1 • High Collector-Emitter Voltage:Vcbo=300V • Collector current:Ic=500mA • Collector Dissipation:Pc=225mW(Ta=25 °C) | WINNERJOIN 永而佳 | | ||
Evaluation Board Rev 5.0 for the Si2493/57/34/15/04 Description The global Si2493/57/34/15/04-EVB evaluation board Rev 5.0 provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem®. The Si2493/57/34/15/04-EVB consists of a motherboard with a power supply, an RS-232 and USB interface, other ease-of-use features, and a | SILABS 芯科科技 | | ||
High Voltage Transistors Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | SYC | | ||
AT90USB1287 (AVR) 64 QFN device (2.7V VCC 5.5V) Overview This document describes the AT88CK109STK3, which is a development kit for the AT88SA100, AT88SA102, and ATSA8810HS CryptoAuthentication devices. This kit uses a modular approach. The development kit includes the AT88Microbase board and the AT88CK109BK3 CryptoAuthentication daughter board | Atmel 爱特梅尔 | | ||
High Voltage Transistors 文件：127.24 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE TRANSISTOR 文件：64.06 Kbytes Page：3 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：109.19 Kbytes Page：4 Pages | UTC 友顺 | | ||
High Voltage Transistors 文件：54.25 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistor NPN Silicon 文件：60.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
贴片晶体管 | DGNJDZ 南晶电子 | | ||
High Voltage Transistor NPN Silicon 文件：60.61 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：163.63 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
High Voltage Transistors 文件：54.25 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：112.07 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：95.33 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：127.24 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：112.07 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：95.33 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Infineon 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：TRANS NPN 300V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：95.33 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
High Voltage Transistors 文件：127.24 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
MMBTA42L产品属性
- 类型
描述
- 型号
MMBTA42L
- 功能描述
两极晶体管 - BJT 500mA 200V NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
16+ |
SOT-23 |
3000 |
进口原装现货/价格优势! |
|||
ON |
22+ |
3000 |
ON代理分销,价格优势现货假一罚十 |
||||
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
20+21+ |
SOT23-3 |
8000 |
全新原装正品 |
|||
ON/安森美 |
20+33+ |
SOT-23 |
1000 |
||||
ON |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
25048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
NUVOTON |
21+ |
SOT-23 |
20000 |
只做原装,质量保证 |
|||
ON/安森美 |
24+ |
SOT-23 |
120000 |
只做原装进口假一赔十全部自己现货库存 |
|||
ON |
24+ |
SOT-23-3 |
23000 |
全新原装现货,量大特价,原厂正规渠道! |
MMBTA42L规格书下载地址
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MMBTA42L数据表相关新闻
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2019-5-14
DdatasheetPDF页码索引
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