N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching

场效应晶体管

MOS场效应

场效应晶体管

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode FET

Features Two transistors in one package Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Logic level converter, Drivers Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01

N-Channel Enhancement Mode FET with protected Gate

Features ESD protected Gate Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Logic level converter, Drivers Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical

N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV

N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV • AEC-Q101 Qualified and PPAP Capable • Halogen and Antimony Free(HAF), RoHS compliant

N-Channel Enhancement Mode FET

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N-Channel Enhancement Mode FET

文件：160.97 Kbytes Page：2 Pages

N-Channel Enhancement Mode FET

文件：146.75 Kbytes Page：3 Pages

N-Channel Enhancement Mode FET

文件：143.27 Kbytes Page：2 Pages

N-Channel Enhancement Mode FET

文件：95.67 Kbytes Page：2 Pages

N-Channel Enhancement Mode FET

文件：143.27 Kbytes Page：2 Pages

N-Channel Enhancement Mode FET

文件：146.75 Kbytes Page：3 Pages

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

C-band Crossbar/Fan-Out

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Male Pins

文件：132.89 Kbytes Page：1 Pages

toggle switches

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