MMBT6520晶体管资料
MMBT6520别名:MMBT6520三极管、MMBT6520晶体管、MMBT6520晶体三极管
MMBT6520生产厂家:美国摩托罗拉半导体公司
MMBT6520制作材料:
MMBT6520性质:低频或音频放大 (LF)_通用 (G)
MMBT6520封装形式:
MMBT6520极限工作电压:350V
MMBT6520最大电流允许值:0.5A
MMBT6520最大工作频率:<1MHZ或未知
MMBT6520引脚数:
MMBT6520最大耗散功率:0.3W
MMBT6520放大倍数:
MMBT6520图片代号:NO
MMBT6520vtest:350
MMBT6520htest:999900
- MMBT6520atest:0.5
MMBT6520wtest:0.3
MMBT6520代换 MMBT6520用什么型号代替:
MMBT6520价格
参考价格:¥0.2569
型号:MMBT6520LT1G 品牌:ONSemi 备注:这里有MMBT6520多少钱,2026年最近7天走势,今日出价,今日竞价,MMBT6520批发/采购报价,MMBT6520行情走势销售排行榜,MMBT6520报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT6520 | High Voltage Transistor(PNP Silicon) High Voltage Transistor PNP Silicon | LRC 乐山无线电 | ||
MMBT6520 | High Voltage Transistor ■ Features ● Collector-Emitter Voltage: VCEO= -350V ● High Voltage Transistor | KEXIN 科信电子 | ||
MMBT6520 | 小信号晶体管 | STMICROELECTRONICS 意法半导体 | ||
高压 PNP 双极晶体管 The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life\n• Miniature SOT-23 Surface Mount Package Saves Board Space\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·High DC Current Gain- : hFE=30(Min)@ (VCE= -10V, IC= -10mA) ·Low Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -30mA, IB= -3mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |||
High Voltage Transistor(PNP Silicon) High Voltage Transistor PNP Silicon | LRC 乐山无线电 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon | ONSEMI 安森美半导体 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon | MOTOROLA 摩托罗拉 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
High Voltage Transistor High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
PNP Transistors 文件:1.35696 Mbytes Page:4 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.39783 Mbytes Page:4 Pages | KEXIN 科信电子 | |||
isc Silicon PNP Power Transistors 文件:301.17 Kbytes Page:3 Pages | ISC 无锡固电 | |||
三极管 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:TRANS PNP 350V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:TRANS PNP 350V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS | ZETEX | |||
Amplifier Transistors Amplifier Transistors Voltage and current are negative for PNP transistors | MOTOROLA 摩托罗拉 | |||
12-Character 4-Line Dot Matrix Low Power LCD Controller Driver with Smooth Scroll Function? 文件:1.23287 Mbytes Page:40 Pages | NJRC 日本无线 | |||
PWM TYPE 3-PHASE FULL-WAVE SENSORSESS MOTOR CONTROLLER 文件:580.45 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
PWM TYPE 3-PHASE FULL-WAVE SENSORSESS MOTOR CONTROLLER 文件:580.45 Kbytes Page:16 Pages | TOSHIBA 东芝 |
MMBT6520产品属性
- 类型
描述
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Polarity:
PNP
- Type:
General Purpose
- VCE(sat) Max (V):
1
- IC Cont. (A):
0.5
- VCEO Min (V):
350
- VCBO (V):
350
- VEBO (V):
5
- VBE(sat) (V):
0.9
- VBE(on) (V):
2
- hFE Min:
30
- hFE Max:
200
- fT Min (MHz):
40
- PTM Max (W):
0.225
- Package Type:
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-23(SOT-23-3) |
10000 |
十年沉淀唯有原装 |
|||
ON(安森美) |
2511 |
SOT-23(SOT-23-3) |
6545 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON/ |
24+ |
SOT23-3 |
5000 |
全新原装正品,现货销售 |
|||
ON |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
23+ |
SOT-23 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ON |
25+ |
24000 |
原厂原装,价格优势 |
||||
onsemi(安森美) |
24+ |
SOT-23(TO-236) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
25+ |
SOT23 |
37306 |
ON/安森美全新特价MMBT6520LT1G即刻询购立享优惠#长期有货 |
|||
ON |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
MOTOROLA |
25+ |
870 |
公司优势库存 热卖中! |
MMBT6520规格书下载地址
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MMBT6520数据表相关新闻
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管,采用 SOT-23 封装,符合 AEC-Q101 要求,适用于汽车、工业等领域。
MMBT5551LT1G 是安森美半导体推出的一款 NPN 型硅高压晶体管,采用 SOT-23 封装,符合 AEC-Q101 要求,适用于汽车、工业等领域。
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原装代理
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MMBT5551-7-F集电极—发射极很大电压 VCEO: 160 V 集电极—基极电压 VCBO: 180 V 发射极 - 基极电压 VEBO: 6 V 集电极—射极饱和电压: 200 mV 很大直流电集电极电流: 600 mA Pd-功率耗散: 300 mW 增益带宽产品fT: 300 MHz
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2019-5-14
DdatasheetPDF页码索引
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