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MMBT3906W价格
参考价格:¥0.0855
型号:MMBT3906WT1G 品牌:ONSemi 备注:这里有MMBT3906W多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT3906W批发/采购报价,MMBT3906W行情走势销售排行榜,MMBT3906W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT3906W | General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon | WEITRON | ||
MMBT3906W | General Purpose Transistor Features • General purpose transistor. • Pb?Free package is available. | KEXIN 科信电子 | ||
MMBT3906W | General Purpose Transistor FEATURES • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT3904W) • Ideal for Medium Power Amplification and Switching | SECOS 喜可士 | ||
MMBT3906W | PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above | PANJIT 強茂 | ||
MMBT3906W | PNP Transistor ■ Features ● Collector Current Capability IC=-0.2A ● Collector Emitter Voltage VCEO=-40V ● Complementary to MMBT3904W) | YFWDIODE 佑风微 | ||
MMBT3906W | Silicon PNP transistor in a SOT-323 Plastic Package Descriptions Silicon PNP transistor in a SOT-323 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier and switching. | FOSHAN 蓝箭电子 | ||
MMBT3906W | PNP Silicon Epitaxial Planar Transistor 文件:213.55 Kbytes Page:5 Pages | GWSEMI 唯圣电子 | ||
MMBT3906W | 通用型双极晶体管 | PANJIT 強茂 | ||
MMBT3906W | 通用双极晶体管 | ONSEMI 安森美半导体 | ||
General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon | ZOWIE 智威 | |||
General Purpose Transistor General Purpose Transistor PNP Silicon Lead free product Halogen-free type | ZOWIE 智威 | |||
PNP Transistor ■ Features ● Collector Current Capability IC=-0.2A ● Collector Emitter Voltage VCEO=-40V ● Complementary to MMBT3904W) | YFWDIODE 佑风微 | |||
General Purpose Transistor General Purpose Transistor NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. | Motorola 摩托罗拉 | |||
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut | ONSEMI 安森美半导体 | |||
General Purpose Transistors(NPN and PNP Silicon) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. | LRC 乐山无线电 | |||
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut | ONSEMI 安森美半导体 | |||
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC | ONSEMI 安森美半导体 | |||
PNP GENERAL PURPOSE SWITCHING TRANSISTOR 文件:128.8 Kbytes Page:4 Pages | PANJIT 強茂 | |||
General Purpose Transistor 文件:449.7 Kbytes Page:5 Pages | SECOS 喜可士 | |||
PNP Transistors 文件:830.36 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
Transistors | WILLAS 威伦电子 | |||
包装:散装 描述:TRANS SS GP PNP 40V SOT323 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
General Purpose Transistors 文件:166.33 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistors 文件:166.33 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 40V 0.2A SC70-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Locking Releasable Wire Clips 文件:107.18 Kbytes Page:1 Pages | Heyco | |||
AC axial compact fan 文件:293.06 Kbytes Page:4 Pages | EBMPAPST 依必安派特 | |||
TUBEAXIAL 文件:358.74 Kbytes Page:1 Pages | EBMPAPST 依必安派特 | |||
TUBEAXIAL 文件:358.74 Kbytes Page:1 Pages | EBMPAPST 依必安派特 | |||
AC axial compact fan 文件:293.23 Kbytes Page:4 Pages | EBMPAPST 依必安派特 |
MMBT3906W产品属性
- 类型
描述
- 型号
MMBT3906W
- 功能描述
两极晶体管 - BJT 200mA 40V PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
N/A |
127048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
24+ |
NA/ |
405000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ON |
24+ |
SOT-323 |
180000 |
只做原装正品现货 |
|||
ST/ON |
25+ |
SOT-323 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON |
20+ |
SMD |
11520 |
特价全新原装公司现货 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
ORIGINAL |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ON |
24+/25+ |
23870 |
原装正品现货库存价优 |
||||
ON/安森美 |
25+ |
SOT-323 |
32360 |
ON/安森美全新特价MMBT3906WT1G即刻询购立享优惠#长期有货 |
MMBT3906W规格书下载地址
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MMBT3906W数据表相关新闻
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晶体管类型:PNP 电流 - 集电极(Ic)(最大值):200mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):400mV @ 5mA,50mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 10mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
2020-9-3
DdatasheetPDF页码索引
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