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MMBT222晶体管资料

  • MMBT2222别名：MMBT2222三极管、MMBT2222晶体管、MMBT2222晶体三极管

  • MMBT2222生产厂家：美国摩托罗拉半导体公司

  • MMBT2222制作材料：

  • MMBT2222性质：射频/高频放大 （HF）_通用 （G）

  • MMBT2222封装形式：

  • MMBT2222极限工作电压：

  • MMBT2222最大电流允许值：0.8A

  • MMBT2222最大工作频率：<1MHZ或未知

  • MMBT2222引脚数：

  • MMBT2222最大耗散功率：

  • MMBT2222放大倍数：

  • MMBT2222图片代号：NO

  • MMBT2222vtest：0

  • MMBT2222htest：999900

  • MMBT2222atest：.8

  • MMBT2222wtest：0

  • MMBT2222代换 MMBT2222用什么型号代替：BCX19,3DG120C,

MMBT222价格

参考价格：￥0.0942

型号：MMBT2222A 品牌：Fairchild 备注：这里有MMBT222多少钱，2024年最近7天走势，今日出价，今日竞价，MMBT222批发/采购报价，MMBT222行情走势销售排行榜，MMBT222报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT2222

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
MMBT2222

NPN(GENERALPURPOSETRANSISTOR)

GENERALPURPOSETRANSISTOR

SamsungSamsung Group

三星三星半导体

Samsung
MMBT2222

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec
MMBT2222

NPNGeneralPurposeTransistors

NPNGeneralPurposeAmplifier P/Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MMBT2222

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier •Sourcedfromprocess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT2222

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
MMBT2222

TRANSISTOR(NPN)

FEATURES ●GenernalPurposeAmplifier

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
MMBT2222

NPNGeneralPurposeAmplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. ●Switchingrequiringcollectorcurrentsupto500mA.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT2222

SOT-23Plastic-EncapsulateTransistors

FEATURES GenernalPurposeAmplifier

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT2222

NPNSiliconEpitaxialplanarTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

Surge

SURGE COMPONENTS

Surge
MMBT2222

NPNGeneralPurposeAmplifier

■Features ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT2907)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
MMBT2222

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●GenernalPurposeAmplifier

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MMBT2222

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MMBT2222

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor NPNGeneralPurposeTransistors

AMERICASEMI

America Semiconductor, LLC

AMERICASEMI
MMBT2222

Epitaxialplanardieconstruction

TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A)

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
MMBT2222

Plastic-EncapsulateTransistors

FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
MMBT2222

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222

TRANSISTOR(NPN)

TRANSISTOR(NPN)

TGS

Tiger Electronic Co.,Ltd

TGS
MMBT2222_V01

SOT-23Plastic-EncapsulateTransistors

FEATURES GenernalPurposeAmplifier

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222A

NPNPlastic-EncapsulateTransistors

FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMBT2907A •PowerDissipationof300mW •HighStabilityandHighReliability MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPosition:Any •Marking:1P

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
MMBT2222A

SOT-23Plastic-EncapsulateTransistors

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222A

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT2222A

TRANSISTOR(NPN)

NPNSilicon

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
MMBT2222A

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec
MMBT2222A

NPNSiliconEpitaxialplanarTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

Surge

SURGE COMPONENTS

Surge
MMBT2222A

NPNTransistors

Features ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
MMBT2222A

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222A

Lowcollector-emittersaturationvoltage

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT2222A

Epitaxialplanardieconstruction

Features ◇Epitaxialplanardieconstruction ◇ComplementaryPNPTypeavailable(MMBT2907A)

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MMBT2222A

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT2222A

NPNSiliconTransistor

Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT2907A

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI
MMBT2222A

300mW,NPNSmallSignalTransistor

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
MMBT2222A

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT2222A

NPNGeneralPurposeAmplifier

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailableMMBT2907A. •Ultra-smallsurfacemountpackage. APPLICATIONS •Useasamediumpoweramplifier. •Switchingrequiringcollectorcurrentsupto500mA.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT2222A

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
MMBT2222A

GeneralPurposeTransistor

FEATURES •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT2907A) •IdealforMediumPowerAmplificationandSwitching

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
MMBT2222A

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
MMBT2222A

TRANSISTOR(NPN)

PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A)

SSC

Silicon Standard Corp.

SSC
MMBT2222A

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT2222A

NPNGeneralPurposeTransistors

NPNGeneralPurposeAmplifier P/Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MMBT2222A

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications •RoHScompliance

TAITRON

TAITRON

TAITRON
MMBT2222A

SmallSignalTransistor(NPN)

Features NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP
MMBT2222A

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec
MMBT2222A

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT2222A

NPNGeneralPurposeAmplifier

Features •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation,IC=600mA •OperatingJunctionTemperature:-55°Cto+150°C •StorageTemperature:-55°Cto+150°C •CaseMaterial:MoldedPlastic.ULFlammabilityClassificatioRating94-0andMSLRating1 •Marking:1P

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MMBT2222A

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
MMBT2222A

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE
MMBT2222A

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT2222A

SmallSignalTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. •ThistransistorisalsoavailableintheTO-92casewiththetypedesignationMPS2222A.

GE

GE Industrial Company

GE
MMBT2222A

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
MMBT2222A

SMALLSIGNALNPNTRANSISTOR

■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISMMBT2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINAND

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MMBT2222A-7

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh

DIODESDiodes Incorporated

达尔科技

DIODES
MMBT2222A-AE3-R

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT2222A-AN3-R

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
MMBT2222A-AU

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT2222A-AU_A0_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT2222A-AU_A0_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT2222A-AU_A1_00001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
MMBT2222A-AU_A1_10001

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

MMBT222产品属性

  • 类型

    描述

  • 型号

    MMBT222

  • 功能描述

    两极晶体管 - BJT NPN Transistor General Purpose

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MMBT222供应商更多...

更新时间：2024-6-7 10:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市芯巴巴科技有限公司
MMBT2222ALT3G
onsemi(安森美)
23+
SOT-23-3
10000
只做原装 假一赔万
询价
深圳市达恩科技有限公司
MMBT2222ALT3G
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
利广微科技（深圳)有限公司
MMBT2222ALT3G
ON/安森美
标准封装
57598
一级代理原装正品现货期货均可订购
询价
深圳市吉银科技有限公司
MMBT2222ALT3G
ON(安森美)
6000
询价
深圳市天芯威科技有限公司
MMBT2222ALT3G
ON/安森美
20+
NA
680000
订货原装进口假一罚十
询价
深圳市一线半导体有限公司
MMBT2222ALT3
ON
08+
SOT23
12000
询价
深圳市华博特电子有限公司
MMBT2222ALT3G
onsemi
23/22+
NA
9000
代理渠道.实单必成
询价
海芯未来半导体电子（深圳）有限公司
MMBT2222ALT3G
ON/安森美
24+
NA
60000
公司只有原装
询价
深圳市芯泽盛世科技有限公司
MMBT2222ALT3G
ON/安森美
22+
SMD
8880
原装认准芯泽盛世！
询价
深圳市百纳智芯科技有限公司
MMBT2222ALT3G
ON/安森美
22+
SOT-23-3
6000
询价

MMBT222芯片相关品牌

  • Actel
  • bel
  • CALIBER
  • EMERSON-NETWORKPOWER
  • KERSEMI
  • NJRC
  • PANDUIT
  • RichTek
  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

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