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MMBT222晶体管资料
MMBT2222别名：MMBT2222三极管、MMBT2222晶体管、MMBT2222晶体三极管
MMBT2222生产厂家：美国摩托罗拉半导体公司
MMBT2222制作材料：
MMBT2222性质：射频/高频放大 （HF）_通用 （G）
MMBT2222封装形式：
MMBT2222极限工作电压：
MMBT2222最大电流允许值：0.8A
MMBT2222最大工作频率：<1MHZ或未知
MMBT2222引脚数：
MMBT2222最大耗散功率：
MMBT2222放大倍数：
MMBT2222图片代号：NO
MMBT2222vtest：0
MMBT2222htest：999900
- MMBT2222atest：0.8
MMBT2222wtest：0
MMBT2222代换 MMBT2222用什么型号代替：BCX19,3DG120C,
MMBT222价格
参考价格：￥0.0942
型号：MMBT2222A 品牌：Fairchild 备注：这里有MMBT222多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT222批发/采购报价，MMBT222行情走势销售排行榜，MMBT222报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   | |
NPN(GENERALPURPOSETRANSISTOR) GENERALPURPOSETRANSISTOR | SamsungSamsung semiconductor 三星三星半导体 |  | | |
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 |  | | |
NPNGeneralPurposeTransistors NPNGeneralPurposeAmplifier P/Lead(Pb)-Free | WEITRON Weitron Technology |  | | |
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier •Sourcedfromprocess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | | |
TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | | |
NPNGeneralPurposeAmplifier FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. ●Switchingrequiringcollectorcurrentsupto500mA. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | | |
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
TRANSISTOR(NPN) TRANSISTOR(NPN) | TGS Tiger Electronic Co.,Ltd |  | | |
SOT-23Plastic-EncapsulateTransistors FEATURES GenernalPurposeAmplifier | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
NPNGeneralPurposeAmplifier ■Features ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT2907) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
NPNSiliconEpitaxialplanarTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | Surge Surge Components |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●GenernalPurposeAmplifier | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor NPNGeneralPurposeTransistors | AMERICASEMI America Semiconductor, LLC |  | | |
Epitaxialplanardieconstruction TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A) | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | | |
Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 |  | | |
SOT-23Plastic-EncapsulateTransistors FEATURES GenernalPurposeAmplifier | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | | | |
NPNPlastic-EncapsulateTransistors FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMBT2907A •PowerDissipationof300mW •HighStabilityandHighReliability MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPosition:Any •Marking:1P | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 |  | | |
SOT-23Plastic-EncapsulateTransistors NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
SurfaceMountSi-Epi-PlanarSwitchingTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | | | |
NPNswitchingtransistor FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
GeneralPurposeTransistor GeneralPurposeTransistor NPNSilicon •WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd |  | | |
NPNTransistor Features ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoisureSensitivityLevel1 ●HighConductance ●SurfacemountpackageideallySuitedforAutomatic Insertion | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司 |  | | |
GENERALPURPOSETRANSISTORNPNSILICON DESCRIPTION The MMBT2222AisavailableinSOT23package FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable ( AvailableinSOT23package | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 |  | | |
SOT-23Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A) | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | | |
TRANSISTOR(NPN) NPNSilicon | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 |  | | |
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh | DIODESDiodes Incorporated 美台半导体 |  | | |
NPNSiliconTransistor Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT2907A | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 |  | | |
300mW,NPNSmallSignalTransistor FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | | |
NPNGeneralPurposeAmplifier FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailableMMBT2907A. •Ultra-smallsurfacemountpackage. APPLICATIONS •Useasamediumpoweramplifier. •Switchingrequiringcollectorcurrentsupto500mA. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | | | |
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
NPNswitchingtransistor | ETC 知名厂家 | ETC | | |
TRANSISTOR(NPN) PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A) | SSC Silicon Standard Corp. |  | | |
GeneralPurposeTransistor FEATURES •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT2907A) •IdealforMediumPowerAmplificationandSwitching | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
SMDGeneralPurposeTransistor(NPN) SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications •RoHScompliance | TAITRON TAITRON Components Incorporated |  | | |
NPNGeneralPurposeTransistors NPNGeneralPurposeAmplifier P/Lead(Pb)-Free | WEITRON Weitron Technology | | | |
NPNGENERALPURPOSEAMPLIFIER FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
SmallSignalTransistor(NPN) Features NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDiotec Semiconductor 德欧泰克 | | | |
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNGeneralPurposeAmplifier Features •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation,IC=600mA •OperatingJunctionTemperature:-55°Cto+150°C •StorageTemperature:-55°Cto+150°C •CaseMaterial:MoldedPlastic.ULFlammabilityClassificatioRating94-0andMSLRating1 •Marking:1P | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 |  | | |
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SmallSignalTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. •ThistransistorisalsoavailableintheTO-92casewiththetypedesignationMPS2222A. | GE GE Industrial Company |  | | |
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISMMBT2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINAND | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
Lowcollector-emittersaturationvoltage NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Epitaxialplanardieconstruction Features ◇Epitaxialplanardieconstruction ◇ComplementaryPNPTypeavailable(MMBT2907A) | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
NPNSiliconEpitaxialplanarTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | Surge Surge Components | | | |
NPNTransistors Features ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh | DIODESDiodes Incorporated 美台半导体 | | | |
NPNGENERALPURPOSEAMPLIFIER FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
MMBT222产品属性
- 类型
描述
- 型号
MMBT222
- 功能描述
两极晶体管 - BJT NPN Transistor General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON/安森美 |
21+ |
SOT-23-3 |
8080 |
只做原装,质量保证 |
|||
ON |
24+/25+ |
9101 |
原装正品现货库存价优 |
||||
ON(安森美) |
23+ |
SOT-23-3 |
11896 |
公司只做原装正品,假一赔十 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON/安森美 |
24+ |
SOT-23-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
2016+ |
SOT-23 |
6523 |
只做原装正品现货!或订货! |
|||
ON |
SOT23- |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON SEMICONDUCTOR |
22+ |
NA |
2656 |
原装正品支持实单 |
|||
ON/安森美 |
22+ |
SOT-23-3 |
12000 |
只有原装,原装,假一罚十 |
MMBT222芯片相关品牌
MMBT222规格书下载地址
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MMBT222数据表相关新闻
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MMBT2222ALT1G可做含税，支持实单
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