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MMBT2222晶体管资料
MMBT2222别名:MMBT2222三极管、MMBT2222晶体管、MMBT2222晶体三极管
MMBT2222生产厂家:美国摩托罗拉半导体公司
MMBT2222制作材料:
MMBT2222性质:射频/高频放大 (HF)_通用 (G)
MMBT2222封装形式:
MMBT2222极限工作电压:
MMBT2222最大电流允许值:0.8A
MMBT2222最大工作频率:<1MHZ或未知
MMBT2222引脚数:
MMBT2222最大耗散功率:
MMBT2222放大倍数:
MMBT2222图片代号:NO
MMBT2222vtest:0
MMBT2222htest:999900
- MMBT2222atest:.8
MMBT2222wtest:0
MMBT2222代换 MMBT2222用什么型号代替:BCX19,3DG120C,
MMBT2222价格
参考价格:¥0.0942
型号:MMBT2222A 品牌:Fairchild 备注:这里有MMBT2222多少钱,2024年最近7天走势,今日出价,今日竞价,MMBT2222批发/采购报价,MMBT2222行情走势销售排行榜,MMBT2222报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT2222 | NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
MMBT2222 | NPN(GENERALPURPOSETRANSISTOR) GENERALPURPOSETRANSISTOR | SamsungSamsung Group 三星三星半导体 | ||
MMBT2222 | SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDIOTEC 德欧泰克 | ||
MMBT2222 | NPNGeneralPurposeTransistors NPNGeneralPurposeAmplifier P/Lead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | ||
MMBT2222 | NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier •Sourcedfromprocess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT2222 | NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
MMBT2222 | TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
MMBT2222 | NPNGeneralPurposeAmplifier FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. ●Switchingrequiringcollectorcurrentsupto500mA. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MMBT2222 | SOT-23Plastic-EncapsulateTransistors FEATURES GenernalPurposeAmplifier | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
MMBT2222 | NPNGeneralPurposeAmplifier ■Features ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT2907) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
MMBT2222 | SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
MMBT2222 | NPNSiliconEpitaxialplanarTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | Surge SURGE COMPONENTS | ||
MMBT2222 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●GenernalPurposeAmplifier | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | ||
MMBT2222 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
MMBT2222 | NPNSiliconEpitaxialTransistor NPNSiliconEpitaxialTransistor NPNGeneralPurposeTransistors | AMERICASEMI America Semiconductor, LLC | ||
MMBT2222 | Epitaxialplanardieconstruction TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A) | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | ||
MMBT2222 | Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
MMBT2222 | NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
MMBT2222 | TRANSISTOR(NPN) TRANSISTOR(NPN) | TGS Tiger Electronic Co.,Ltd | ||
MMBT2222 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 30V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MMBT2222 | 40VNPNSmallSignalTransistors 文件:1.12483 Mbytes Page:9 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | ||
MMBT2222 | NPNGeneralPurposeAmplifier 文件:1.05865 Mbytes Page:2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MMBT2222 | NPNGeneralPurposeAmplifier 文件:160.32 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MMBT2222 | NPNSiliconEpitaxialPlanarTransistor 文件:403.86 Kbytes Page:4 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | ||
MMBT2222 | GeneralPurposeTransistorsNPNSilicon 文件:128.09 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MMBT2222 | SurfaceMountSi-Epi-PlanarSwitchingTransistors 文件:100.75 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
SOT-23Plastic-EncapsulateTransistors FEATURES GenernalPurposeAmplifier | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
NPNPlastic-EncapsulateTransistors FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMBT2907A •PowerDissipationof300mW •HighStabilityandHighReliability MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPosition:Any •Marking:1P | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | |||
SOT-23Plastic-EncapsulateTransistors NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SMDGeneralPurposeTransistor(NPN) SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications •RoHScompliance | TAITRON TAITRON | |||
NPNGeneralPurposeAmplifier FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailableMMBT2907A. •Ultra-smallsurfacemountpackage. APPLICATIONS •Useasamediumpoweramplifier. •Switchingrequiringcollectorcurrentsupto500mA. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
NPNGeneralPurposeTransistors NPNGeneralPurposeAmplifier P/Lead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
NPNGENERALPURPOSEAMPLIFIER FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SmallSignalTransistor(NPN) Features NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDIOTEC 德欧泰克 | |||
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
NPNGeneralPurposeAmplifier Features •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation,IC=600mA •OperatingJunctionTemperature:-55°Cto+150°C •StorageTemperature:-55°Cto+150°C •CaseMaterial:MoldedPlastic.ULFlammabilityClassificatioRating94-0andMSLRating1 •Marking:1P | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZOWIE 智威智威科技股份有限公司 | |||
NPNGeneralPurposeAmplifier NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SmallSignalTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. •ThistransistorisalsoavailableintheTO-92casewiththetypedesignationMPS2222A. | GE GE Industrial Company | |||
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISMMBT2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINAND | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
NPNSiliconTransistor Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT2907A | KODENSHIKodenshi Group 可天士可天士光电子集团 | |||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh | DIODESDiodes Incorporated 达尔科技 | |||
300mW,NPNSmallSignalTransistor FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
GeneralPurposeTransistor FEATURES •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT2907A) •IdealforMediumPowerAmplificationandSwitching | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPNswitchingtransistor DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
TRANSISTOR(NPN) PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A) | SSC Silicon Standard Corp. | |||
NPNSiliconEpitaxialPlanarMediumPowerTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
Lowcollector-emittersaturationvoltage NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPNTransistors Features ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNSiliconEpitaxialplanarTransistor NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications | Surge SURGE COMPONENTS | |||
Epitaxialplanardieconstruction Features ◇Epitaxialplanardieconstruction ◇ComplementaryPNPTypeavailable(MMBT2907A) | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
TRANSISTOR(NPN) NPNSilicon | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
SurfaceMountSi-Epi-PlanarSwitchingTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped | DiotecDIOTEC 德欧泰克 | |||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh | DIODESDiodes Incorporated 达尔科技 |
MMBT2222产品属性
- 类型
描述
- 型号
MMBT2222
- 功能描述
两极晶体管 - BJT NPN Transistor General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
FAIRCHILD |
16+ |
原封装 |
3961 |
原装现货假一罚十 |
|||
ON/安森美 |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
FAIRCHILD |
2017+ |
SOT-23 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
CJ |
1408+ |
SOT-23 |
50000 |
绝对原装进口现货可开增值税发票 |
|||
ON原装 |
14+ |
SOT23 |
50000 |
深圳现货 |
|||
CJ/长电 |
22+ |
SOT-23 |
12680 |
||||
ON/安森美 |
23+ |
SOT23-3 |
20000 |
热卖优势现货 |
|||
FAIRCHILD |
20+/21+ |
SOT-23 |
9500 |
全新原装现货 |
|||
DIODES/美台 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
MMBT2222规格书下载地址
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MMBT2222数据表相关新闻
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