NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

NPN (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped

NPN General Purpose Transistors

NPN General Purpose Amplifier P/ Lead(Pb) - Free

NPN General Purpose Amplifier

NPN General Purpose Amplifier • Sourced from process 19.

NPN Silicon Epitaxial Planar Medium Power Transistor

NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

TRANSISTOR(NPN)

FEATURES ● Genernal Purpose Amplifier

NPN General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Use as a medium power amplifier. ● Switching requiring collector currents up to 500mA.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Genernal Purpose Amplifier

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package Features Collector currents up to 600mA. Applications General purpose amplifier.

NPN Silicon Epitaxial planar Transistor

NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● Genernal Purpose Amplifier

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Genernal Purpose Amplifier

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor NPN General Purpose Transistors

Epitaxial planar die construction

TRANSISTOR (NPN) FEATURES ● Epitaxial planar die construction ● Complementary PNP Type available(MMBT2907A)

Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction. Ultra-small surface mount package.

TRANSISTOR(NPN)

TRANSISTOR (NPN)

NPN General Purpose Amplifier

■ Features ● Epitaxial planar die construction. ● Complementary PNP type available(MMBT2907)

NPN Silicon Epitaxial Planar Medium Power Transistor

NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

40V NPN Small Signal Transistors

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 30V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30V,0.6A,General Purpose NPN Bipolar Transistor

75V,600MA，NPN Transistor

NPN小信号三极管

NPN General Purpose Amplifier

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NPN Silicon Epitaxial Planar Transistor

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NPN General Purpose Amplifier

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General Purpose Transistors NPN Silicon

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Surface Mount Si-Epi-Planar Switching Transistors

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SOT-23 Plastic-Encapsulate Transistors

FEATURES Genernal Purpose Amplifier

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMBT2907A • Power Dissipation of 300mW • High Stability and High Reliability MECHANICAL DATA • Case:SOT-23(TO-236) • Terminals:Plated solderable per MIL-STD-750,method 2026 • Mounting Position: Any • Marking:1P

SOT-23 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Collector currents up to 600 mA. Applications General purpose amplifier.

TRANSISTOR (NPN)

NPN Silicon

NPN General-Purpose Amplifier

Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19.

NPN switching transistor

FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

General Purpose Transistor

General Purpose Transistor NPN Silicon • We declare that the material of product compliance with RoHS requirements.

NPN Transistor

Features ● Epoxy meets UL-94 V-0 flammability rating ● Halogen free available upon request by adding suffix ”HF” ● Moisure Sensitivity Level 1 ● High Conductance ● Surface mount package ideally Suited for Automatic Insertion

GENERAL PURPOSE TRANSISTOR NPN SILICON

DESCRIPTION The MMBT2222A is available in SO T 23 p ackage FEATURES  Epitaxial planar die construction  Complementary PNP Type available (  Availabl e in SO T 23 p ackage

SOT-23 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A)

Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A)

SMD General Purpose Transistor (NPN)

SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance

NPN GENERAL PURPOSE AMPLIFIER

FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA.

Small Signal Transistor (NPN)

Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount Si-Epi-Planar Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Small Signal Transistor (NPN)

Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.

NPN General Purpose Amplifier

Features • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation, IC=600mA • Operating Junction Temperature: -55°C to +150°C • Storage Temperature: -55°C to +150°C • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 • Marking:1P

NPN Silicon Switching Transistor

NPN Silicon Switching Transistor • Low collector-emitter saturation voltage • Complementary type: SMBT2907A / MMBT2907A (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN General Purpose Transistors

NPN General Purpose Amplifier P/ Lead(Pb) - Free

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

SMALL SIGNAL NPN TRANSISTOR

■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE & REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS ■ WELL SUITABLE FOR PORTABLE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Pb free product are available :99 Sn above can meet Rohs environment substance directive request

NPN Silicon Transistor

Descriptions •General purpose application •Switching application Features •Low Leakage current •Low collector saturation voltage enabling low voltage operation •Complementary pair with MMBT2907A

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type: MMBT2907A • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High

NPN General Purpose Amplifier

FEATURES • Epitaxial planar die construction. • Complementary PNP type available MMBT2907A. • Ultra-small surface mount package. APPLICATIONS • Use as a medium power amplifier. • Switching requiring collector currents up to 500mA.

NPN Silicon Epitaxial Planar Medium Power Transistor

NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications

NPN switching transistor