MMBT2222晶体管资料

  • MMBT2222别名:MMBT2222三极管、MMBT2222晶体管、MMBT2222晶体三极管

  • MMBT2222生产厂家:美国摩托罗拉半导体公司

  • MMBT2222制作材料

  • MMBT2222性质:射频/高频放大 (HF)_通用 (G)

  • MMBT2222封装形式

  • MMBT2222极限工作电压

  • MMBT2222最大电流允许值:0.8A

  • MMBT2222最大工作频率:<1MHZ或未知

  • MMBT2222引脚数

  • MMBT2222最大耗散功率

  • MMBT2222放大倍数

  • MMBT2222图片代号:NO

  • MMBT2222vtest:0

  • MMBT2222htest:999900

  • MMBT2222atest:.8

  • MMBT2222wtest:0

  • MMBT2222代换 MMBT2222用什么型号代替:BCX19,3DG120C,

MMBT2222价格

参考价格:¥0.0942

型号:MMBT2222A 品牌:Fairchild 备注:这里有MMBT2222多少钱,2024年最近7天走势,今日出价,今日竞价,MMBT2222批发/采购报价,MMBT2222行情走势销售排行榜,MMBT2222报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT2222

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
MMBT2222

NPN(GENERALPURPOSETRANSISTOR)

GENERALPURPOSETRANSISTOR

SamsungSamsung Group

三星三星半导体

Samsung
MMBT2222

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec
MMBT2222

NPNGeneralPurposeTransistors

NPNGeneralPurposeAmplifier P/Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
MMBT2222

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier •Sourcedfromprocess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT2222

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
MMBT2222

TRANSISTOR(NPN)

FEATURES ●GenernalPurposeAmplifier

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
MMBT2222

NPNGeneralPurposeAmplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. ●Switchingrequiringcollectorcurrentsupto500mA.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT2222

SOT-23Plastic-EncapsulateTransistors

FEATURES GenernalPurposeAmplifier

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222

NPNGeneralPurposeAmplifier

■Features ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT2907)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
MMBT2222

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT2222

NPNSiliconEpitaxialplanarTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

Surge

SURGE COMPONENTS

Surge
MMBT2222

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●GenernalPurposeAmplifier

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MMBT2222

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GenernalPurposeAmplifier

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MMBT2222

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor NPNGeneralPurposeTransistors

AMERICASEMI

America Semiconductor, LLC

AMERICASEMI
MMBT2222

Epitaxialplanardieconstruction

TRANSISTOR(NPN) FEATURES ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A)

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
MMBT2222

Plastic-EncapsulateTransistors

FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
MMBT2222

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT2222

TRANSISTOR(NPN)

TRANSISTOR(NPN)

TGS

Tiger Electronic Co.,Ltd

TGS
MMBT2222

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 30V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT2222

40VNPNSmallSignalTransistors

文件:1.12483 Mbytes Page:9 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
MMBT2222

NPNGeneralPurposeAmplifier

文件:1.05865 Mbytes Page:2 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MMBT2222

NPNGeneralPurposeAmplifier

文件:160.32 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
MMBT2222

NPNSiliconEpitaxialPlanarTransistor

文件:403.86 Kbytes Page:4 Pages

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
MMBT2222

GeneralPurposeTransistorsNPNSilicon

文件:128.09 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT2222

SurfaceMountSi-Epi-PlanarSwitchingTransistors

文件:100.75 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec

SOT-23Plastic-EncapsulateTransistors

FEATURES GenernalPurposeAmplifier

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Collectorcurrentsupto600mA. Applications Generalpurposeamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNPlastic-EncapsulateTransistors

FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMBT2907A •PowerDissipationof300mW •HighStabilityandHighReliability MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPosition:Any •Marking:1P

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

SOT-23Plastic-EncapsulateTransistors

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications •RoHScompliance

TAITRON

TAITRON

TAITRON

NPNGeneralPurposeAmplifier

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailableMMBT2907A. •Ultra-smallsurfacemountpackage. APPLICATIONS •Useasamediumpoweramplifier. •Switchingrequiringcollectorcurrentsupto500mA.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

NPNGeneralPurposeTransistors

NPNGeneralPurposeAmplifier P/Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

NPNGENERALPURPOSEAMPLIFIER

FEATURES *Thisdeviceisforuseasamediumpoweramplifierandswitch requiringcollectorcurrentsupto600mA.

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SmallSignalTransistor(NPN)

Features NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNGeneralPurposeAmplifier

Features •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation,IC=600mA •OperatingJunctionTemperature:-55°Cto+150°C •StorageTemperature:-55°Cto+150°C •CaseMaterial:MoldedPlastic.ULFlammabilityClassificatioRating94-0andMSLRating1 •Marking:1P

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE

NPNGeneralPurposeAmplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SmallSignalTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. •ThistransistorisalsoavailableintheTO-92casewiththetypedesignationMPS2222A.

GE

GE Industrial Company

GE

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SMALLSIGNALNPNTRANSISTOR

■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISMMBT2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHHIGHGAINAND

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

NPNSiliconTransistor

Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT2907A

KODENSHIKodenshi Group

可天士可天士光电子集团

KODENSHI

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh

DIODESDiodes Incorporated

达尔科技

DIODES

300mW,NPNSmallSignalTransistor

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

GeneralPurposeTransistor

FEATURES •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT2907A) •IdealforMediumPowerAmplificationandSwitching

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNswitchingtransistor

DESCRIPTION NPNswitchingtransistorinaSOT23plasticpackage. PNPcomplement:PMBT2907A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.40V). APPLICATIONS •Switchingandlinearamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TRANSISTOR(NPN)

PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A)

SSC

Silicon Standard Corp.

SSC

NPNSiliconEpitaxialPlanarMediumPowerTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Lowcollector-emittersaturationvoltage

NPNSiliconSwitchingTransistor •Lowcollector-emittersaturationvoltage •Complementarytype: SMBT2907A/MMBT2907A(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPNTransistors

Features ●Epitaxialplanardieconstruction ●ComplementaryPNPTypeavailable(MMBT2907A)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconEpitaxialplanarTransistor

NPNSiliconEpitaxialPlanarMediumPowerTransistorforswitchingandamplifierapplications

Surge

SURGE COMPONENTS

Surge

Epitaxialplanardieconstruction

Features ◇Epitaxialplanardieconstruction ◇ComplementaryPNPTypeavailable(MMBT2907A)

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

TRANSISTOR(NPN)

NPNSilicon

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtaped

DiotecDIOTEC

德欧泰克

Diotec

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPType:MMBT2907A •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHigh

DIODESDiodes Incorporated

达尔科技

DIODES

MMBT2222产品属性

  • 类型

    描述

  • 型号

    MMBT2222

  • 功能描述

    两极晶体管 - BJT NPN Transistor General Purpose

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-25 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
FAIRCHILD
16+
原封装
3961
原装现货假一罚十
ON/安森美
23+
SOT23-3
15000
全新原装现货,价格优势
FAIRCHILD
2017+
SOT-23
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
CJ
1408+
SOT-23
50000
绝对原装进口现货可开增值税发票
ON原装
14+
SOT23
50000
深圳现货
CJ/长电
22+
SOT-23
12680
ON/安森美
23+
SOT23-3
20000
热卖优势现货
FAIRCHILD
20+/21+
SOT-23
9500
全新原装现货
DIODES/美台
23+
NA
7825
原装正品!清仓处理!

MMBT2222芯片相关品牌

  • ABRACON
  • AD
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  • Motorola
  • NIC
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  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

MMBT2222数据表相关新闻