RF AMPLIFIER TRANSISTOR

RF AMPLIFIER TRANSISTOR

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT, small NF. Applications High frequency amplifier applications.

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RF & MICROWAVE TRANSISTORS

DESCRIPTION The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. KEY FEATURES ◾ High FTau-1.4GHz ◾ Low noise-4.5dB@200MHz ◾ Low cost SOT23 package APPLICATIONS/BENEFITS ◾ LNA, Oscillator, Pre-Driver

RF AMPLIFIER TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200

RF & MICROWAVE TRANSISTORS

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - 179

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY * WIRELESS LANS * REMOTE METERING * TAGGING

High Frequency Transistor(NPN Silicon)

NPN Silicon

NPN (HIGH FREQUENCY TRANSISTOR)

HIGH FREQUENCY TRANSISTOR

丝印代码：T6；NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB