RF AMPLIFIER TRANSISTOR

RF AMPLIFIER TRANSISTOR

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT, small NF. Applications High frequency amplifier applications.

三极管

RF AMPLIFIER TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. KEY FEATURES ◾ High FTau-1.4GHz ◾ Low noise-4.5dB@200MHz ◾ Low cost SOT23 package APPLICATIONS/BENEFITS ◾ LNA, Oscillator, Pre-Driver

RF & MICROWAVE TRANSISTORS

5000 WATTS (AC) DC/D CSINGLE OUTPUT

5000 WATTS (AC) DC/DC SINGLE OUTPUT

5000 WATTS (AC) DC/D CSINGLE OUTPUT

5000 WATTS (AC) DC/DC SINGLE OUTPUT

SC Duplex Single Mode Transceiver Multisourced 1 x 9 pin configuration

文件：345.22 Kbytes Page：8 Pages

SC Duplex Single Mode Transceiver Multisourced 1 x 9 pin configuration

文件：345.22 Kbytes Page：8 Pages

DO-35 Case

文件：155.73 Kbytes Page：1 Pages