SURFACE MOUNT SCHOTTKY DIODES

VOLTAGE 20 Volts CURRENT 200 mA FEATURES • Very Low VF: 0.32V (Typ) at IF = 1mA • Low Capacitance: 2.5 pF (Max) at VR=0V • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

丝印代码：P73；SURFACE MOUNT SCHOTTKY DIODES

FEATURES Very Low VF: 0.32V (Typ) at IF = 1mA Low Capacitance: 2.5 pF (Max) at VR=0V Extremely Fast Switching Speed Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . (Halogen Free)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Single and Dual Diode Low Forward Voltage, Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY DIODES

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SURFACE MOUNT SCHOTTKY DIODES

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Schottky Diodes

Small Signal Schottky

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Single and Dual Diode Low Forward Voltage, Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Single and Dual Diode Low Forward Voltage, Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

COMMON ANODE SCHOTTKY BARRIER DIODES

VOLTAGE 20 Volts CURRENT 200 mA FEATURES • Very Low VF: 0.37V (Typ) at IF = 1mA • Low Capacitance: 2.5 pF (Max) at VR=0V • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Single and Dual Diode Low Forward Voltage, Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：SURFACE MOUNT SWITCHING DIODE 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Diodes

SURFACE MOUNT SCHOTTKY DIODES

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SURFACE MOUNT SCHOTTKY DIODES

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封装/外壳：SC-70，SOT-323 包装：散装 描述：SURFACE MOUNT SCHOTTKY DIODE 分立半导体产品 二极管 - 整流器 - 阵列

Common Anode Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Feat

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 77mΩ at 3A

DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 500mW POWER DISSIPATION * IC CONT 1.5A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switc