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MMBD354L价格
参考价格:¥0.3202
型号:MMBD354LT1G 品牌:ONSemi 备注:这里有MMBD354L多少钱,2025年最近7天走势,今日出价,今日竞价,MMBD354L批发/采购报价,MMBD354L行情走势销售排行榜,MMBD354L报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | |||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
包装:卷带(TR)剪切带(CT) 描述:DIODE SWITCH DUAL 7V SOT23 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Hot Carrier Mixer Diodes 文件:93.76 Kbytes Page:3 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Hot Carrier Mixer Diodes 文件:93.76 Kbytes Page:3 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Hot Carrier Mixer Diodes 文件:122.87 Kbytes Page:3 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:管件 描述:DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ACD354x Single Channel 14-bit 250MSPS and 500MSPS Analog-to-Digital Converter (ADC) 1 Features • 14-bit, single channel 250 and 500MSPS ADC • Noise spectral density: -158.5dBFS/Hz • Thermal Noise: 74.5dBFS • Single core (non-interleaved) ADC architecture • Power consumption: – 435mW (500MSPS) – 369mW (250MSPS) • Aperture jitter: 75fs • Buffered analog inputs – Programma | TITexas Instruments 德州仪器美国德州仪器公司 | |||
ACD354x Single Channel 14-bit 250MSPS and 500MSPS Analog-to-Digital Converter (ADC) 1 Features • 14-bit, single channel 250 and 500MSPS ADC • Noise spectral density: -158.5dBFS/Hz • Thermal Noise: 74.5dBFS • Single core (non-interleaved) ADC architecture • Power consumption: – 435mW (500MSPS) – 369mW (250MSPS) • Aperture jitter: 75fs • Buffered analog inputs – Programma | TI1Texas Instruments 德州仪器美国德州仪器公司 | |||
THRU-HOLE THREADED INSERT W/FLANGE 文件:121.32 Kbytes Page:1 Pages | WITTEN Witten Company, Inc. | |||
Fuse Blocks and Clips - For 3AG Fuses 文件:100.29 Kbytes Page:1 Pages | Littelfuselittelfuse 力特力特公司 | |||
REMOCON MODULE 文件:303.32 Kbytes Page:8 Pages | E-OEC Opto Electronics Co,. LTD |
MMBD354L产品属性
- 类型
描述
- 型号
MMBD354L
- 功能描述
整流器 7V 225mW Dual
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON |
23+ |
SOT-23 |
9000 |
正规渠道,只有原装! |
|||
ON |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ON |
24+ |
SOT-23 |
3750 |
||||
ON |
23+ |
原厂封装 |
9896 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
SOT23 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ON/安森美 |
2022+ |
400 |
全新原装 货期两周 |
||||
MOTOROLA/摩托罗拉 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
MOTOROLA |
24+ |
SOT23 |
15300 |
公司常备大量原装现货,可开13%增票! |
MMBD354L规格书下载地址
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商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) - 漏源电压(Vdss) - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散(Ta=25°C) 225mW
2020-11-12
DdatasheetPDF页码索引
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